Showing papers by "Pascal Bevilacqua published in 2010"
16 Mar 2010
TL;DR: A solution to provide self protection in a normally-On JFET voltage fed inverter using Normally-On devices is proposed, a plug-in to an existing Gate driver.
Abstract: In this paper, the authors propose a solution to provide self protection in a normally-On JFET voltage fed inverter. The solution is a plug-in to an existing Gate driver. An overview of JFET Gate driving serves as an introduction to the problem of self protection of inverters using Normally-On devices.
28 citations
16 Mar 2010
TL;DR: In this paper, the authors present a discrete base driver for a SiC bipolar transistor and validates its performances in ambient temperature while the SiC BJT is operated at high temperature.
Abstract: The control of a SiC bipolar transistor may look like the control of its Si counterpart, but not quite in fact. This paper presents a discrete base driver for a SiC bipolar transistor and validates its performances in ambient temperature while the SiC BJT is operated at high temperature. Performances and limitations of a 2 kW SiC-BJT based inverter are investigated.
8 citations
TL;DR: In this article, a discret SiC BJT converter has been designed and fabricated to operate at high temperature with high efficiency, and a preliminary analysis of a SOI driver, anticipating the behavior of SiC-BJT and the change in behavior at high temperatures.
Abstract: Looking back to the development of inverters using SiC switches, it appears that SiC devices do not behave like their silicon counterparts. Their ability to operate at high temperature makes them attractive. Developing drivers suitable for 200 °C operation is not straightforward. In a perspective of high integration and large power density, it is wise to consider a monolithic integration of the driver parts for the sake of reliability. Silicon is not suitable for high ambient temperature; silicon-oninsulator offers better performances and presents industrial perspectives. The paper focuses on a SiC BJT driver: it processes logical orders from outside, drives adequately the BJT to turn it either on or off, monitors the turn-off and turn-on state of the device, and acts accordingly to prevent failure. SiC BJT imposes specific performances different from the well known ones of SiC JFET or MOSFET. The paper addresses a preliminary analysis of a SOI driver, anticipating the behavior of SiC-BJT and the change in behavior at high temperature. A discret driver has been designed and fabricated. Elementary functional blocks have been validated, and a BJT converter successfully operated at high temperature with high efficiency ( = 88%).
1 citations