Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500 °C, whereas silicon is limited to 150-200 °C. Applications such as transportation or a deep oil and gas wells drilling can benefit. A few converters operating above 200 °C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).

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State of the art of high temperature power electronics

To maximize the introduction of renewable energy, introducing grid energy storage systems are essential. Electrochemical energy storage system, i.e., battery system, exhibits high potential for grid energy storage application. A battery energy storage system is comprised of a battery module and a power conversion module. This paper starts by reviewing several potential battery systems, as well as an advanced aluminum-ion battery that currently has promising prospects in the electrochemical energy storage system. The characteristics of the batteries are reviewed and compared, including the materials, electrochemistry, performance and costs. The application prospect of the batteries is discussed. The paper summarizes the features of current and future grid energy storage battery, lists the advantages and disadvantages of different types of batteries, and points out that the performance and capacity of large-scale battery energy storage system depend on battery and power condition system (PCS). The power conversion system determines the operational condition of the entire energy storage system. The new generation wide bandgap semiconductor for power electronic technology is discussed from the perspective of performance, topology, model and non-linearity and is compared to the traditional silicon-based semiconductor. Finally, the application prospect of the new generation semiconductor technology in the energy storage system is indicated. This paper concludes the application status of the energy storage system in the renewable energy power generation and indicates the critical problems that need to be addressed during the construction and operation of the storage system.

Energy storage system: Current studies on batteries and power condition system

In this paper, a high-temperature, high-frequency, wire-bond-based multichip phase-leg module was designed, fabricated, and fully tested. Using paralleled Silicon Carbide (SiC) MOSFETs, the module was rated at 1200 V and 60 A, and was designed for a 25-kW three-phase inverter operating at a switching frequency of 70 kHz, and in a harsh environment up to 200 °C, for aircraft applications. To this end, the temperature-dependent characteristics of the SiC MOSFET were first evaluated. The results demonstrated the superiority of the SiC MOSFET in both static and switching performances compared to Si devices, but meanwhile did reveal the design tradeoff in terms of the device's gate oxide stability. Various high-temperature packaging materials were then extensively surveyed and carefully selected for the module to sustain the harsh environment. The electrical layout of the module was also optimized using a modeling and simulation approach, in order to minimize the device parasitic ringing during high-speed switching. Finally, the static and switching performances of the fabricated module were tested, and the 200 °C continuous operation of the SiC MOSFETs was verified.

A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

This paper investigates the switching behavior of normally OFF silicon carbide (SiC) JFETs in an inverter for a motor drive. The parasitic ringing caused by different parasitic effects is analyzed. Two different methods, the use of an RC snubber and the use of suppression ferrite component, are investigated for dampening the parasitic oscillations. It is found that applying a ferrite bead not only dampens the parasitic oscillations, but also results in significantly lower switching losses. Furthermore, it is shown that the capacitive coupling between SiC devices in the bridge leg and heat sinks significantly deteriorates the JFETs' switching performance. The effect of two substrates, an insulated metal substrate and a printed circuit board, on the capacitive coupling is investigated. A method in which the use of two separate heat spreaders minimizes the capacitive coupling, thus, exploiting the full potential of fast SiC JFETs is proposed.

Improving SiC JFET Switching Behavior Under Influence of Circuit Parasitics

In this paper, common mode (CM) conducted perturbations are predicted and compared with experiments in a variable-speed drive system, thanks to a mixed approach based on experimental measurements and on the modeling of the complete CM circuit. Its different parts are considered and represented by a chain of quadripolar matrices: the inverter, the cables, and the induction motor. At last, it is shown that the parasitic currents in the system can be calculated in the different stages of the matrix chain. Experiments have successfully confirmed this approach.

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Modeling of conducted common mode perturbations in variable-speed drive systems

SiC devices enable for high temperature operation of power converters. The paper describes the laboratory step by step work towards an airborne high temperature inverter : 200C cooling source, 4 kVA power. From 'JFET only' to 'full three phase power stage' tested up to 250C, including capacitor. Device samples are characterized in order to set the requirements for the gate driver and to evaluate maximum switchable power. Switching losses are measured using high precision shunt and voltage probes. A prototype is built and operation under full load (15A) is verified.

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Towards an airborne high temperature SiC inverter

This paper deals with the issue of electromagnetic interference (EMI) in SiC-JFET inverter power modules, and proposes a solution to limit conducted emissions at high frequencies. SiC-JFET inverters can achieve very fast switching, thereby reducing commutation losses, at the cost of a high level of EMI. In order to limit conducted EMI emissions, it is proposed to integrate small-value common-mode (CM) capacitors, directly into the power module. High-frequency noise, which is usually difficult to filter, is then contained within the module, thus keeping it far from the external network. This approach is in line with the current trend toward the integration of various functions (such as protection, sensors or drivers) around power devices in modern power modules. To demonstrate this concept, the resulting CM noise was investigated, and compared with a standard configuration. Simulations were used to design the integrated capacitors, and measurements were carried out on an experimental SiC-JFET half-bridge structure. A significant reduction was achieved in the experimentally observed CM conducted emissions, with a very minor influence on the switching waveforms, losses, and overall size of the system. The benefits and limitations of this design are discussed for the case of mid-power range inverters for aircraft applications.

https://hal.archives-ouvertes.fr/hal-00874455/document

Design and Implementation of Integrated Common Mode Capacitors for SiC-JFET Inverters

Study of die attach technologies for high temperature power electronics: Silver sintering and gold–germanium alloy

The invention provides a 12-pulse converter comprising an autotransformer having a primary winding connected in a delta configuration and two secondary windings connected in star configurations, the two secondary windings being connected to two rectifier bridges that are enabled to operate in parallel by two interphase chokes, the converter further comprising means for generating an additional magnetic leakage flux in at least one of the interphase chokes so as to incorporate a smoothing choke therein.

Régis Meuret

Papers

Modeling of conducted common mode perturbations in variable-speed drive systems

Towards an airborne high temperature SiC inverter

Design and Implementation of Integrated Common Mode Capacitors for SiC-JFET Inverters

Study of die attach technologies for high temperature power electronics: Silver sintering and gold–germanium alloy

12-pulse converter including a filter choke incorporated in the rectifier