Open Access
Normally-On SiC JFETs in power converters: Gate driver and safe operation
Dominique Bergogne,Damien Risaletto,Fabien Dubois,Asif Hammoud,Hervé Morel,Pascal Bevilacqua,Bruno Allard,Olivier Berry,Farid Meibody-Tabar,Stéphane Raël,Régis Meuret,Sonia Dhokkar,Hispano-Suiza +12 more
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TLDR
A solution to provide self protection in a normally-On JFET voltage fed inverter using Normally-On devices is proposed, a plug-in to an existing Gate driver.Abstract:
In this paper, the authors propose a solution to provide self protection in a normally-On JFET voltage fed inverter. The solution is a plug-in to an existing Gate driver. An overview of JFET Gate driving serves as an introduction to the problem of self protection of inverters using Normally-On devices.read more
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Journal ArticleDOI
Gate and Base Drivers for Silicon Carbide Power Transistors: An Overview
TL;DR: An overview of the gate and base drivers for SiC power transistors which have been proposed by several highly qualified scientists is shown and the basic operating principle of each driver along with their applicability and drawbacks are presented.
Journal ArticleDOI
Self-Powered Gate Driver for Normally ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply
TL;DR: In this article, a self-powered gate driver without external power supply for normally ON silicon carbide JFETs is presented, which is able to handle the short-circuit currents when the devices are subjected to the dc-link voltage by utilizing the energy associated with this current.
Journal ArticleDOI
Design Steps Toward a 40-kVA SiC JFET Inverter With Natural-Convection Cooling and an Efficiency Exceeding 99.5%
TL;DR: In this paper, the authors describe the concept, design, construction, and experimental investigation of a 40-kVA inverter with silicon carbide junction field effect transistors (JFETs).
Journal ArticleDOI
Comparison study on performances and robustness between SiC MOSFET & JFET devices – Abilities for aeronautics application
D. Othman,D. Othman,D. Othman,Mounira Berkani,Stéphane Lefebvre,Ali Ibrahim,Zoubir Khatir,A. Bouzourene +7 more
TL;DR: Performances and reliability aspects of MOSFET and JFET power transistors devices based on silicon carbide technology are evaluated to analyze their capability to withstand with aeronautic harsh environmental constrains.
Journal ArticleDOI
Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters
TL;DR: In this paper, thermal loading of the state-of-the-art gallium nitride (GaN) High-electron-mobility transistors (HEMTs) and traditional Si IGBTs in three-level active neutral-point-clamped photovoltaic inverters is presented considering real-field long-term mission profiles.
References
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Proceedings ArticleDOI
A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter
TL;DR: In this article, a gate driver for the SiC JFET gate was proposed to improve the switching performance by operating the gate in avalanche mode during the off time, and the proposed gate driver was shown to have a better switching performance compared to the conventional conventional SiC gate drivers.
Proceedings ArticleDOI
Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET
M. Treu,Roland Rupp,Peter Blaschitz,K. Ruschenschmidt,T. Sekinger,P. Friedrichs,R. Elpelt,D. Peters +7 more
TL;DR: This paper compares the two most prominent alternatives of an upcoming commercial SiC power switch: JFET vs. MOSFET.
Journal ArticleDOI
Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories
Peter Friedrichs,Heinz Mitlehner,Rainer Kaltschmidt,Ulrich Weinert,Wolfgang Bartsch,Christian Hecht,Karl Otto Dohnke,Benno Weis,Dietrich Stephani +8 more
Proceedings ArticleDOI
A novel SiC J-FET gate drive circuit for sparse matrix converter applications
TL;DR: In this paper, a gate drive circuit for a SiC J-FETs to be employed in an AII-SiC-SMC is proposed, and the operating principle of the driver circuit is discussed and practically verified in a bridge leg topology.
Proceedings ArticleDOI
Inherently safe DC/DC converter using a normally-on SiC JFET
TL;DR: The design of an inherently safe DC-DC converter specifically for normally on silicon-carbide based power JFETs is examined, illustrating proof of principle of the self-biased gate driver configuration for deriving a stable 5-Vdc output from a 25-V dc input.