P
Patrick J. Klersy
Researcher at University of Rochester
Publications - 11
Citations - 1276
Patrick J. Klersy is an academic researcher from University of Rochester. The author has contributed to research in topics: Layer (electronics) & Electrical contacts. The author has an hindex of 9, co-authored 11 publications receiving 1276 citations. Previous affiliations of Patrick J. Klersy include Intel.
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Patent
Metal structure for a phase-change memory device
TL;DR: In this article, the damascene chalcogenide memory cell structure is fabricated under conditions that simplify previous process flows, and the cell structure also prevents volatilization of the chalgene memory material.
Patent
Multiple layer phase-change memory
TL;DR: A phase change memory may be formed with at least two phase-change material layers separated by a barrier layer, which enables a reduction in the programming volume while still providing adequate thermal insulation.
Patent
Electrically programmable memory element with improved contacts
Tyler Lowrey,Stanford R. Ovshinsky,Guy C. Wicker,Patrick J. Klersy,Boil Pashmakov,Wolodymyr Czubatyj,Sergey A. Kostylev +6 more
TL;DR: In this paper, a memory element comprising a volume of phase change memory material (250) and first and second contact for supplying an electrical signal to the memory material, wherein the first contact comprises a conductive sidewall spacer (130A, B).
Patent
Electrically programmable memory element with multi-regioned contact
TL;DR: An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state is considered in this article.
Patent
Electrically programmable memory element with reduced area of contact and method for making same
TL;DR: An electrically operated programmable resistance memory element having a conductive layer as an electrical contact was described in this article, where a raised portion extending from an edge of the layer to an end adjacent the memory material was shown.