Stephen J. Hudgens

TL;DR: The phase-change nonvolatile semiconductor memory (PCNVM) as mentioned in this paper is based on an electrically initiated, reversible rapid amorphous-to-crystalline phase change process in multicomponent chalcogenide alloy materials similar to those used in rewriteable optical disks.

TL;DR: In this article, an electrically erasable phase change memory utilizing a stoichiometrically balanced phase change material was proposed, in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states were substantially reduced below those attainable with prior state-of-the-art phase change memories.

TL;DR: In this paper, a novel class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed.

TL;DR: In this article, the authors proposed a method comprising forming a sacrificial layer over less than the entire portion of a contact area on a substrate, the sacrificial layers having a thickness defining an edge over the contact area, forming a spacer layer over the spacer, conforming to the shape of the first sacrificial surface, removing the edge, while retaining the edge portion, and forming a programmable material to the area formerly occupied by the edge.

TL;DR: A phase change memory may be formed with at least two phase-change material layers separated by a barrier layer, which enables a reduction in the programming volume while still providing adequate thermal insulation.