Paul A. George

TL;DR: The results show that carrier cooling occurs on subpicosecond time scales and that interband recombination times are carrier density dependent.

TL;DR: In this article, the optical absorption spectra of epitaxial graphene from the visible to the terahertz frequency range were analyzed and it was shown that in the near-IR range, the absorption is due to interband processes and the measured optical conductivity is close to the theoretical value of e2/4ℏ.

TL;DR: In this paper, the ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene were studied using optical-pump Terahertz-probe spectroscopy.

TL;DR: In this paper, the authors studied the relaxation dynamics of hot optical phonons in few-layer and multilayer graphene films grown by epitaxy on silicon carbide substrates and by chemical vapor deposition on nickel substrates.

TL;DR: In this paper, electron-hole generation and recombination rates for intra-valley and intervalley phonon scattering in graphene were analyzed and showed that the transverse and the longitudinal optical phonon modes E2g modes near the zone center point contribute to intravalley interband carrier scattering.