P
Paul Seidel
Researcher at University of Jena
Publications - 367
Citations - 6934
Paul Seidel is an academic researcher from University of Jena. The author has contributed to research in topics: Josephson effect & Thin film. The author has an hindex of 28, co-authored 364 publications receiving 5591 citations. Previous affiliations of Paul Seidel include Schiller International University & Roma Tre University.
Papers
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Journal ArticleDOI
Demonstration of HTS microwave sub-systems with a pulse tube cryocooler
Hong Li,Wenxiu Zhu,Jinghui Cai,Pingsheng Zhang,Yuan Zhou,Aisheng He,Zhonglin Gong,Yusheng He,Paul Smith,T.W. Button,J.E. Holmes,Michael J. Lancaster,Adrian Porch,B. Avenhaus,P. Woodall,F. Wellhofer,Colin Gough,Gabriele Kaiser,Paul Seidel,M. Thürk +19 more
TL;DR: In this article, a special pulse tube cryocooler was designed and fabricated, and two HTS microwave devices were integrated with this cooler, which operate successfully as practical HTS sub-systems.
Journal ArticleDOI
Potential mechanical loss mechanisms in bulk materials for future gravitational wave detectors
D. Heinert,Alexander Grib,K. Haughian,J. H. Hough,Stefanie Kroker,P. G. Murray,Ronny Nawrodt,Ronny Nawrodt,Sheila Rowan,C. Schwarz,Paul Seidel,Andreas Tünnermann +11 more
TL;DR: In this paper, the authors present an analysis of the contribution of Akhieser and thermoelastic damping on the experimental results of resonant mechanical loss measurements, showing that the combination of both processes allows the fit of the experimental data of quartz in the low temperature region (10K to 25K).
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Temperature-dependent transport characteristics of quasiballistic normal-metal-superconductor junctions
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Coherent emission of intrinsic Josephson junctions
Alexander Grib,Paul Seidel +1 more
TL;DR: In this paper, the model of synchronization of intrinsic Josephson junctions in a mesa structure of a high-temperature superconductor is developed, and the model describes numerically the dependence of the frequency of the coherent emission on the width of samples obtained in experiments.
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CoSi2 buffer films on single crystal silicon with Co ions pre-implanted surface layer for YBCO/CoSi2/Si heterostructures
TL;DR: In this article, the Co ions pre-implanting process on Si(100) surface with low dose 10 15 −10 16 cm −2 at implantation energy 80 keV was used to grow smooth CoSi 2 films as buffer layers for the YBCO/CoSi 2 /(Co + )Si structure.