Showing papers by "Paul W. Marshall published in 1999"
12 Jul 1999
TL;DR: In this article, the authors present heavy ion and proton single event effects (SEE) as well as radiation damage ground test results for candidate spacecraft electronics including digital, analog, and hybrid devices.
Abstract: We present heavy ion and proton single event effects (SEE) as well as radiation damage ground test results for candidate spacecraft electronics. Microelectronics tested include digital, analog, and hybrid devices.
27 citations
01 Jan 1999
TL;DR: In this article, the authors discuss the relationship of non-lonizing energy loss rate (NIEL) to device behavior and the use of NIEL in the design of a satellite.
Abstract: IV. Proton Effects and Test Issues for Satellite DesignersPart B: Displacement EffectsCheryl J. MarshallNASA/Goddard Space Flight CenterElectrical Systems Center / Code 562Greenbelt, Maryland 20771Paul W. MarshallConsultant7655 Hat Creek RoadBrookneal, VA 245281.0 Introduction 512.0 Proton Induced Displacement Damage Mechanisms and Tools 522.1 Displacement Damage Mechanisms and Defect Formation 532.2 Displacement Damage Effects in Materials and Devices 562.3 Non-lonizing Energy Loss Rate (NIEL) Concept 592.3.12.3.22.3.32.3.42.4The Correlation of NIEL to Device Behavior 61Limitations in the Use of NIEL 64Calculation of Displacement Damage Equivalent Fiuences ....... 68Concept of"Displacement Damage Dose". 69On-Orbit Performance Predictions 703.0 Proton Displacement Damage Case Studies 743.1 Introduction 743.2 Laboratory Radiation Test Issues 743.3 Case Studies 773.3.13.3.23.3.33.3.43.3.53.3.6Bipolar Transistors 77Charge Transfer Devices 79Photodetectors 87Lasers and Light Emitting Diodes 90Optocouplers 92Solar Cells 964.0 Summary 995.0 Acknowledgments 1006.0 References 100IV-50
25 citations
01 Jan 1999
TL;DR: In this paper, the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects, which are deeply rooted in "traditional" descriptions of space radiation effects.
Abstract: This portion of the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects. While both of these topics are deeply rooted in "traditional" descriptions of space radiation effects, there are several factors at play to cause renewed concern for satellite systems being designed today. For example, emphasis on Commercial Off-The-Shelf (COTS) technologies in both commercial and government systems increases both Total Ionizing Dose (TID) and Single Event Effect (SEE) concerns. Scaling trends exacerbate the problems, especially with regard to SEEs where protons can dominate soft error rates and even cause destructive failure. In addition, proton-induced displacement damage at fluences encountered in natural space environments can cause degradation in modern bipolar circuitry as well as in many emerging electronic and opto-electronic technologies.
19 citations
13 Sep 1999
TL;DR: In this paper, the in-flight data of SEUs in the devices of panels B and C of the MPTB experiments were presented, and the ground test data for M65656 were used to calculate the SEU rates in this device using the calculated flux of ions along the orbit.
Abstract: The in-flight data of SEUs in the devices of panels B and C of the MPTB experiments are presented. Ground test data for M65656 are used to calculate the SEU rates in this device using the calculated flux of ions along the orbit. The models used are CREME96, simple expressions derived here, and the figure of merit model. A very good agreement is found between these calculations and the observed rates.
17 citations
13 Sep 1999
TL;DR: In this article, a novel approach for proton-induced single event upset characterization of the Signal Processing Technologies SPT760 is presented. But the work is limited to the case of the NASA Geoscience Laser Altimeter System.
Abstract: Some high-speed space-borne data acquisition and dissemination systems require conversion of an analog data signal into a digital signal for on-board digital processing. The NASA Geoscience Laser Altimeter System (GLAS) is one such instrument. It uses the Signal Processing Technologies SPT7760 to convert an analog signal from the laser altimeter. The analog data is converted by the SPT7760 at 1 Giga-sample per second (Gsps). These types of data handling applications can typically withstand a relatively high bit error ratio (BER). In this paper, we describe the a novel approach for proton-induced single event upset characterization of the SPT760. Data is given for operating sample rates from 125 Msps to 1 Gsps.
7 citations
13 Sep 1999
TL;DR: In this article, a radiation evaluation methodology and proton ground test results for candidate COTS PCBs and their associated electronics for low-altitude, low-inclination orbits are presented.
Abstract: We present a radiation evaluation methodology and proton ground test results for candidate COTS PCBs and their associated electronics for low-altitude, low-inclination orbits. We also discuss the implications associated with mission orbit and duration.
7 citations
01 Jan 1999
TL;DR: In this paper, the authors consider only proton induced displacement damage in the natural space environment and consider only solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.
Abstract: Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves. Ion-solid interactions and the nature of the displacement damage they generate have been studied extensively for over half a century, yet they still remain a subject of investigation. In this section, a description of the mechanisms by which displacement damage is produced will be followed by a summary of the major consequences for device performance in a space environment. Often the degradation of a device parameter can be characterized by a damage factor (measured in a laboratory using monoenergetic protons) that is simply the change in a particular electrical or optical parameter per unit proton fluence. In addition, we will describe the concept of a non-ionizing energy loss rate (NIEL) which quantifies that portion of the energy lost by an incident ion that goes into displacements. It has been calculated as a function of proton energy, and is analogous to (and has the same units as) the linear energy transfer (LET) for ionizing energy. We will discover that, to first order, the calculated NIEL describes the energy dependence of the measured device damage factors. This observation provides the basis for predicting proton induced device degradation in a space environment based on both the calculated NIEL and relatively few laboratory test measurements. The methodology of such on-orbit device performance predictions will be described, as well as the limitations. Several classes of devices for which displacement damage is a significant (if not the dominant) mode of radiation induced degradation will be presented.
1 citations