Showing papers by "Paul W. Marshall published in 2000"
TL;DR: This attempt at circuit level single event effects (SEE) hardening of SiGe HBT logic provides the first reported indication of the level of sensitivity in this important technology.
Abstract: This attempt at circuit level single event effects (SEE) hardening of SiGe HBT logic provides the first reported indication of the level of sensitivity in this important technology, Characterization over data rate up to 3 Gbps and over a broad range of heavy ion LETs provides important clues to upset mechanisms and implications for upset rate predictions. We augment ion test data with pulsed laser SEE testing to indicate the sensitive targets within the circuit and to provide insights into the upset mechanism(s),.
108 citations
TL;DR: In this paper, the authors measured the energy dependence of proton-induced LED degradation using large numbers of devices and incremental exposures to gain high confidence in the proton energy dependence and device-to-device variability of damage.
Abstract: We measure the energy dependence of proton-induced LED degradation using large numbers of devices and incremental exposures to gain high confidence in the proton energy dependence and device-to-device variability of damage. We compare single versus double heterojunction AlGaAs technologies (emitting at 880 nm and 830 nm, respectively) to previous experimental and theoretical results. We also present a critical review of the use of nonionizing energy loss in AlGaAs for predictions of on-orbit degradation and assess the uncertainties inherent in this approach.
50 citations
TL;DR: In this article, the effects of 63 MeV proton irradiation on both the lateral and vertical scaling properties of SiGe HBT BiCMOS technology are examined. And the authors present the first experimental results of the effects.
Abstract: We present the first experimental results of the effects of 63 MeV proton irradiation on both the lateral and vertical scaling properties of SiGe HBT BiCMOS technology. Three distinct generations of (unhardened) SiGe technology are examined. The first generation SiGe HBTs experience very minor degradation in current gain at proton fluence as high as 2/spl times/10/sup 13/ p/cm/sup 2/. The second and third generations SiGe HBTs, however, show 60-70% degradation in current gain under similar conditions, suggesting that emitter-base spacer optimization may be required as the technology is scaled. Si nFETs from the first generation SiGe BiCMOS technology are only hard to about 40 krad equivalent gamma dose, and are limited by drain-to-source leakage along the shallow trench edge. The second generation Si nFETs, however, improve with scaling since the shallow trench is thinned, and can withstand up to 150 krad of equivalent dose.
35 citations