P
Paul W. Sanders
Researcher at Motorola
Publications - 15
Citations - 249
Paul W. Sanders is an academic researcher from Motorola. The author has contributed to research in topics: Gate dielectric & Layer (electronics). The author has an hindex of 7, co-authored 15 publications receiving 249 citations.
Papers
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Patent
Mosfet with substrate source contact
TL;DR: In this article, a vertical MOSFET with a back-side source contact (94,169) and a top-side gate (104,166) and drain contacts (98,168) is presented.
Patent
Multiple chip package with thinned semiconductor chips
TL;DR: In this paper, an assembly is formed by coupling a plurality of semiconductor chips (26-29) to a surface of a substrate (17), and an encapsulation material (22) is placed on the surface of the substrate, which is used to protect the semiconductor chip from an external environment.
Patent
Method for forming a MOSFET with substrate source contact
TL;DR: In this article, two trenches are etched from the top surface to the P-, N + interface, and a gate dielectric and gate electrode are provided over the sidewall P- region exposed in the other trench.
Patent
Method for forming bipolar transistor input protection
TL;DR: In this paper, a polysilicon diode (24) is connected across a base-emitter junction of the bipolar transistor (10) and a poly-silicon resistor (38) in series with an emitter of a bipolar transistor.
Patent
Process for dielectrically isolated semiconductor structure
TL;DR: In this paper, a process is disclosed for controllably providing dielectrically isolated semiconductor regions having a uniform and well defined thickness. Grooves are formed in a first surface of a semiconductor substrate and then a dielectric layer is formed covering that surface and the grooves extending into the surface.