P
Pavel Moravec
Researcher at Charles University in Prague
Publications - 120
Citations - 1557
Pavel Moravec is an academic researcher from Charles University in Prague. The author has contributed to research in topics: Hall effect & Electrical resistivity and conductivity. The author has an hindex of 20, co-authored 117 publications receiving 1462 citations. Previous affiliations of Pavel Moravec include Centre national de la recherche scientifique.
Papers
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High-temperature electron and hole mobility in CdTe
TL;DR: In this article, the Hall mobilities of electrons at temperatures between 300-1300 K and holes between 225-600 K were measured and the measured mobilities agree very well with theoretical calculations.
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Type conversion of p-(HgCd)Te using and Ar reactive ion etching
TL;DR: In this paper, the effect of the ratio on the depth of the etched surface and the depths of the p - n junction created under the etch surface were studied for the reactive ion etching (RIE) process.
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Deep levels, charge transport and mixed conductivity in organometallic halide perovskites
A. Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekárek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Landová,Lucie Landová,Bin Hu,Eric Lukosi,Mahshid Ahmadi +13 more
TL;DR: In this paper, the authors used photo-Hall effect spectroscopy (PHES) with enhanced illumination in both steady-state and dynamic regimes to determine DL activation energy and capture cross section, and demonstrated the existence of DL defects responsible for nonradiative recombination and their positions inside the bandgap for the first time.
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High temperature defect structure of Cd- and Te-rich CdTe
Roman Grill,Jan Franc,P. Höschl,Ivan Turkevych,Eduard Belas,Pavel Moravec,Michael Fiederle,Klaus-Werner Benz +7 more
TL;DR: In this article, the electric properties can be described only by two native defects-cadmium interstitial as the divalent donor and cadmium vacancy as the acceptor.
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CdTe and CdZnTe crystals for room temperature gamma-ray detectors
TL;DR: In this article, the Bridgman method was used to grow CdTe(Cl) detectors from CdZn-Te single crystals, which were tested with 57Co and 241Am sources and the quality of the detectors was tested by measurements of the diffusion length of minority carriers.