Showing papers by "Pavel Shiktorov published in 2017"
01 Oct 2017
TL;DR: In this paper, a proper design of GaN MOSFET n+nn+ channel with uncentered gate in n-region to reach the maximum detection sensitivity is proposed, where the main role in formation of longitudinal transport asymmetry and THz radiation detection is played by optical phonon emission process.
Abstract: Electron transport and drain current noise in the wurtzite GaN MOSFET have been studied by Monte Carlo particle simulation which simultaneously solves the Boltzmann transport and pseudo-2D Poisson equations. A proper design of GaN MOSFET n+nn+ channel with uncentered gate in n-region to reach the maximum detection sensitivity is proposed. It is shown that the main role in formation of longitudinal transport asymmetry and THz radiation detection is played by optical phonon emission process. It is found that the detection current at 300 K is maximal in frequency range from 0.5 to 7 THz. At higher frequenciea the detection current rapidly decreases due to the inertia of electron motion.
2 citations
01 Jun 2017
TL;DR: In this article, the cooling effect was obtained under excitation of 2D-plasma waves in the gated region of the channel due to streamingplasma instabilities, and the results were obtained in the framework of two, hydrodynamic and Monte Carlo, models of carrier transport and related electronic noise description in the channels of FET and MOSFET structures.
Abstract: The appearance of “cooling” phenomena in the noise temperature spectrum is presented. The results are obtained in the framework of two, hydrodynamic and Monte Carlo, models of carrier transport and related electronic noise description in the channels of FET and MOSFET structures. The cooling effect was obtained under excitation of 2D-plasma waves in the gated region of the channel due to streaming-plasma instabilities.
01 Jun 2017
TL;DR: In this article, the drain current and average electron energy under the gate at 300 K were calculated as a function of drain bias, and the electron cooling when the average energy under gate is less than thermal electron energy is demonstrated.
Abstract: Electron transport and drain current noise in optimized for THz generation wurtzite GaN MOSFET have been studied by Monte Carlo particle simulation which simultaneously solve the Boltzmann transport and pseudo-2D Poisson equations. The drain current and average electron energy under the gate at 300 K is calculated as a function of drain bias. The electron cooling when average electron energy under the gate is less than thermal electron energy is demonstrated. The step like current voltage relation due to the optical phonon emission is shown. It is found that THz generation in frequency range from 6 to 10 THz is possible at room temperature.