Pawitter J. S. Mangat

TL;DR: In this paper, a method for manipulating an image displayed on an electronic device is described, which includes panning the image in response to a detection of a first stroke (125, 410, 610 ) of a touch-and pressure-sensitive input modality, while the electronic device was in a pan mode; changing between pan mode and a zoom mode, when the stroke was performed using an amount of touch pressure that meets a first pressure criterion; and then zooming the image to a second stroke (130, 415, 615) while the device is in the zoom mode

TL;DR: In this paper, an EUV mask (10, 309 ) includes an opening (26) that helps to attenuate and phase shift extreme ultraviolet radiation using a subtractive rather than additive method.

TL;DR: In this article, the authors developed mask blank multilayer coating processes with low added defect density, such as defect compensation and buffer layer smoothing, to reduce the added defect printability.

TL;DR: In this article, a process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating on the backside to facilitate electrostatic chucking and to correct for any bowing caused by either other deposited coating or the multilayer coating of the mask substrate.

TL;DR: In this paper, the authors demonstrated the transfer of dense and loose-pitch line/space (L/S) photoresist features, patterned with extreme ultraviolet (EUV) lithography, into an underlying hard mask material.