Based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons, we present a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions. We show that the Seebeck coefficient can be significantly increased due to a strongly energy-dependent electronic scattering time. By including phonon scattering, we find that the enhancement of $ZT$ due to electron scattering is important for high doping, while at low doping it is primarily due to a decrease in the phonon thermal conductivity.

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Theory of enhancement of thermoelectric properties of materials with nanoinclusions.

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.

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Metal oxide semiconductor thin-film transistors for flexible electronics

Electrons and Phonons

Thermoelectric applications have attracted increasing interest recently due to its capability of converting waste heat into electricity without hazardous emissions. Materials with enhanced thermoelectric performance have been reported in recent two decades. The revival of research for thermoelectric materials began in early 1990s when the size effect is considered. Low-dimensional materials with exceptionally high thermoelectric figure of merit (ZT) have been presented, which broke the limit of ZT around unity. The idea of size effect in thermoelectric materials even inspired the later nanostructuring and band engineering strategies, which effectively enhanced the thermoelectric performance of bulk materials. In this overview, the size effect in low-dimensional thermoelectric materials is reviewed. We first discuss the quantum confinement effect on carriers, including the enhancement of electronic density of states, semimetal to semiconductor transition and carrier pocket engineering. Then, the effect of assumptions on theoretical calculations is presented. Finally, the effect of phonon confinement and interface scattering on lattice thermal conductivity is discussed.

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Size effect in thermoelectric materials

Although indium tin oxide (ITO) is widely used in optoelectronics due to its high optical transmittance and electrical conductivity, its degenerate doping limits exploitation as a semiconduction material. In this work, we created short-channel active transistors based on an ultra-thin (down to 4 nm) ITO channel and a high-quality, lanthanum-doped hafnium oxide dielectric of equivalent oxide thickness of 0.8 nm, with performance comparative to that of existing metal oxides and emerging two-dimensional materials. Short-channel immunity, with a subthreshold slope of 66 mV per decade, off-state current 10 GHz, have been demonstrated. The unique wide bandgap and low dielectric constant of ITO provide prospects for future scaling below the 5-nm regime for advanced low-power electronics. Controlled physical vapour deposition of indium tin oxide layers with thickness down to 4 nm allows the use of these materials as active channels in high-performing transistors for digital and radiofrequency electronics.

Nanometre-thin indium tin oxide for advanced high-performance electronics.

We report a unique approach for the inclusion of size-tunable (7–50 nm), spherical Ge quantum dots (QDs) into gate stacks of metal-oxide-semiconductor (MOS) diodes, through selective oxidation of SiGe layers over the buffer layer of Si3N4 deposited over the Si substrate. In this complementary MOS (CMOS)-compatible approach, we successfully realized high performance nm scale Ge-QD MOS photodetectors with high figures of merit of low dark current density (1.5 × 10−3 mA cm−2), superior photo-current-to-dark current ratio (13 500), high photoresponsivity (2.2 A W−1), and fast response time (5 ns), which are ready for direct integration with Si CMOS electronic circuits. Most importantly, the detection wavelength of the Ge QDs is tunable from near infrared to near ultraviolet by reducing the QD size from 50 to 7 nm as well as the optimal photoresponsivity is tailored by the Ge QD size and the effective thickness of gate dielectrics.

Size tunable Ge quantum dots for near-ultraviolet to near-infrared photosensing with high figures of merit

A complementary metal-oxide-semiconductor-compatible method is proposed to form atomic-scale germanium (Ge) quantum dots (<10 nm) for application in single-electron devices or optical devices. The formation of Ge quantum dots is realized by the Ge atoms’ segregation and agglomeration during thermal oxidation of Si1−xGex alloys. The size and distribution of the Ge dots are determined by conditions of thermal oxidation process and Ge content in the alloys. An average Ge-dot size of 5.1 nm with standard deviation of 1.79 nm and a comparatively uniform spatial distribution (dot density of 7.9×1011 cm−2) could be obtained by selective oxidation of Si0.85Ge0.15/Si-on-insulator structure.

Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe'Si-on-insulator

An otherwise random, self-assembly of Ge quantum dots (QDs) on Si has been controlled by nano-patterning and oxidation to produce QDs with desired sizes, locations, and depths of penetration into the Si substrate. A heterostructure consisting of a thin amorphous interfacial oxide between the Ge QD and the Si substrate is shown to improve crystalline quality by de-coupling the lattice-matching constraint. A low dark current density of 1.1 μA/cm2 and a high photocurrent enhancement up to 35 000 and 1500, respectively, for 1.5 mW incident illumination at 850 nm and 1160 nm was measured on our Ge QD-based metal-oxide-semiconductor photodiodes.

Designer Ge quantum dots on Si: A heterostructure configuration with enhanced optoelectronic performance

We have fabricated a Ge quantum dot (QD) (~10?nm) single-hole transistor with self-aligned electrodes using thermal oxidation of a SiGe-on-insulator nanowire based on FinFET technology. This fabricated device exhibits clear Coulomb blockade oscillations with large peak-to-valley ratio (PVCR) of 250?750 and negative differential conductance with PVCR of ~12 at room temperature. This reveals that the gate-induced tunneling barrier lowering is effectively suppressed due to the self-aligned electrode structure. The magnitude of tunneling current spectra also reveals the coupling strengths between the energy levels of the Ge QD and electrodes.

Tunneling spectroscopy of a germanium quantum dot in single-hole transistors with self-aligned electrodes

We demonstrated a unique CMOS approach for the production of a high-performance germanium (Ge) quantum dot (QD) metal-oxide-semiconductor phototransistor. In the darkness, low off-state leakage (Ioff???0.27 pA ?m?2), a high on-off current ratio (Ion/Ioff???106), and good switching behaviors (subthreshold swing of 175 mV/dec) were measured on our Ge-QD phototransistor at 300 K, indicating good hetero-interfacial quality of the Ge-on-Si. Illumination makes a significant enhancement in the drain current of Ge QD phototransistors when biased at both the on- and off-states, which is a great benefit from Ge QD-mediated photoconductive and photovoltaic effects. The measured photocurrent-to-dark-current ratio (Iphoto/Idark) and the photoresponsivities from the Ge QD phototransistor are as high as 4.1???106 and 1.7 A W?1, respectively, under an incident power of 0.9 mW at 850 nm illumination. A superior external quantum efficiency of 240% and a very fast temporal response time of 1.4 ns suggest that our Ge QD MOS phototransistor offers great promise as optical switches and transducers for Si-based optical interconnects.

https://iopscience.iop.org/article/10.1088/0957-4484/26/5/055203/pdf

Pei-Wen Li

Papers

Size tunable Ge quantum dots for near-ultraviolet to near-infrared photosensing with high figures of merit

Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe'Si-on-insulator

Designer Ge quantum dots on Si: A heterostructure configuration with enhanced optoelectronic performance

Tunneling spectroscopy of a germanium quantum dot in single-hole transistors with self-aligned electrodes

Designer germanium quantum dot phototransistor for near infrared optical detection and amplification