A white light emitting lamp is disclosed comprising a solid state ultra violet (UV) emitter that emits light in the UV wavelength spectrum. A conversion material is arranged to absorb at least some of the light emitting from the UV emitter and re-emit light at one or more different wavelengths of light. One or more complimentary solid state emitters are included that emit at different wavelengths of light than the UV emitter and the conversion material. The lamp emits a white light combination of light emitted from the complimentary emitters and from the conversion material, with the white light having high efficacy and good color rendering. Other embodiments of white light emitting lamp according to the present invention comprises a solid state laser instead of a UV emitter. A high flux white emitting lamp embodiment according to the invention comprises a large area light emitting diode (LED) that emits light at a first wavelength spectrum and includes a conversion material. A plurality of complimentary solid state emitters surround the large area LED, with each emitter emitting light in a spectrum different from the large area LED and conversion material such that the lamp emits a balanced white light. Scattering particles can be included in each of the embodiments to scatter the light from the emitters, conversion material and complimentary emitters to provide a more uniform emission.

Multiple component solid state white light

An EUV light source is disclosed that may include a laser source, eg CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, eg mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power

Laser produced plasma euv light source

Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source

An injection seeded modular gas discharge laser system (2) capable of producing high quality pulsed beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator (10) producing a very narrow band seed beam, which is amplified (12) in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in the ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan (10A) providing sufficient gas flow to permit operation at pulse rates of 4,000 Hz or greater by cleaning debris from the discharge region in less time that the approximately 0.25 milliseconds between pulses. The masters oscillation is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.

Very narrow band, two chamber, high rep rate gas discharge laser system

An emitter includes a light source and a separately formed conversion material region with conversion particles. The light source is capable of emitting light along a plurality of light paths extending through the conversion material region where at least some of the light can be absorbed by the conversion particles. The light from the light source and the light re-emitted from the conversion particles combine to provide a desired color of light. Each light path extends through a substantially similar amount of conversion particles so that the desired color of light has a substantially uniform color and intensity along each light path.

Composite white light source and method for fabricating

The present invention provides a reliable modular production quality excimer laser capable of producing 10 mJ laser pulses in the range of 1000 Hz to 2000 Hz or greater. Replaceable modules include a laser chamber (211); a pulse power system comprised of three modules; an optical resonator comprised of a line narrowing module (206) and an output coupler module (216); a wavemeter module (213), an electrical control module (205), a cooling water module (203) and a gas control module (202). Improvements in the pulse power unit to produce faster rise time and improved pulse energy control include: sn increased capacity high voltage power supply with a voltage bleed-down circuit for precise voltage trimming, an improved commutation module (209) that generates a high voltage pulse from the capacitors charged by the high voltage power supply (20) and amplifies the pulse voltage 23 times with a very fast voltage transformer having a secondary winding consisting of a single four-segment stainless steel rod. The compression head (207) saturable inductor greatly reduces the quantity of oil required and virtually eliminates the possibility of oil leakage.

Reliable, modular, production quality narrow-band high rep rate F2 laser

The present invention provides a reliable modular production quality excimer laser capable of producing 10 mJ laser pulses at 2000 Hz with a full width half, maximum bandwidth of about 0.6 pm or less. Replaceable modules include a laser chamber; a pulse power system comprised of three modules; an optical resonator comprised of a line narrowing module and an output coupler module; a wavemeter module, an electrical control module, a cooling water module and a gas control module. Improvements in the laser chamber permitting the higher pulse rates and improved bandwidth performance include a single upstream preionizer tube and a high efficiency chamber. The chamber is designed for operation at lower fluorine concentration. Important improvements have been provided in the pulse power unit to produce faster rise time and improved pulse energy control. These improvements include an increased capacity high voltage power supply with a voltage bleed-down circuit for precise voltage trimming, an improved commutation module that generates a high voltage pulse from the capacitors charged by the high voltage power supply and amplifies the pulse voltage 23 times with a very fast voltage transformer having a secondary winding consisting of a single four-segment stainless steel rod. A novel design for the compression head saturable inductor greatly reduces the quantity of transformer oil required and virtually eliminates the possibility of oil leakage which in the past has posed a hazard.

Reliable, modular, production quality narrow-band high rep rate ArF excimer laser

A wavelength system for measuring and controlling the wavelength of a narrowband laser. The system includes a wavemeter (120) for measuring incremental changes in wavelength and an atomic wavelength reference (190) for calibrating the wavemeter (120). The atomic wavelength reference (190) includes a vapor cell (194) for providing a vapor having at least one absorption line near a desired operating wavelength. The system includes a wavelength tuning device (36) with a tuning range sufficient to tune the laser to operate at the wavelength of the absorption line in order to calibrate the wavemeter (120). In a preferred embodiment, the laser is an ArF laser, and the vapor is platinum and the absorption line is either 193,224.3 pm or 293,436.9. Improvements over prior art devices include an improved etalon (184) having a support flange (81) to provide a low stress three-point hanging support (86) for the etalon without use of elastomer.

Wavelength system for an excimer laser

The present invention provides an excimer laser capable of producing a high quality pulsed laser beam at pulse rates of about 4,000 Hz at pulse energies of about 5mJ or greater. A preferred embodiments is an ArF excimer laser specifically designed as a light source for integrated circuit lithography. An improved wavemeter with special software monitors output beam parameters and controls a very fast PZT driven tuning mirror and the pulse power charging voltage to maintain wavelength and pulse energy within desired limits. In a preferred embodiment two fan motors drive a single tangential fan which provides sufficient gas flow to clear discharge debris from the discharge region during the approximately 0.25 milliseconds between pulses.

FOUR KHz GAS DISCHARGE LASER

An excimer laser with a purged beam path capable of producing a high quality pulsed laser beam at pulse rates in excess of 2,000 Hz at pulse energies of about 5mJ or greater. The entire purged beam path through the laser system is sealed to minimize contamination of the beam path. A preferred embodiment comprises a thermally decoupled LNP aperture element (70A) to minimize thermal distortions in the LNP (54). This preferred embodiment is an ArF excimer laser specifically designed as a light source for integrated circuit lithography. A wavemeter (7) is provided with a special purge of a compartment exposed to the output laser beam.

Peter C. Newman

Papers

Reliable, modular, production quality narrow-band high rep rate F2 laser

Reliable, modular, production quality narrow-band high rep rate ArF excimer laser

Wavelength system for an excimer laser

FOUR KHz GAS DISCHARGE LASER

Gas discharge laser with improved beam path