P
Peter H. Beton
Researcher at University of Nottingham
Publications - 272
Citations - 11056
Peter H. Beton is an academic researcher from University of Nottingham. The author has contributed to research in topics: Quantum tunnelling & Magnetic field. The author has an hindex of 53, co-authored 266 publications receiving 9576 citations. Previous affiliations of Peter H. Beton include University of Manchester & Queen Mary University of London.
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Journal ArticleDOI
Emergent rhombus tilings from molecular interactions with M-fold rotational symmetry.
TL;DR: It is shown that model molecules with particular rotational symmetries can self-assemble into network structures equivalent to rhombus tilings, in the sense that molecules spontaneously select irregular fourfold local coordination from a larger set of possible local binding geometries.
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Passivation of Si(111)‐7×7 by a C60 monolayer
TL;DR: In this article, the effects of exposure to atmosphere and water on C60 monolayers were assessed by comparing images of the surface acquired using an UHV scanning tunneling microscope, showing that deposition of one monolayer of C60 on a Si surface can inhibit chemical attack by water and atmospheric oxygen.
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Absence of long-range ordered reconstruction on the GaAs(311)A surface
Philip Moriarty,Yuan-Ron Ma,Andrew Dunn,Peter H. Beton,Mohamed Henini,Colm McGinley,Eilish McLoughlin,Attilio A. Cafolla,G. Hughes,SW Downes,D. Teehan,Bridget M. Murphy +11 more
TL;DR: In this paper, the decapped GaAs(311)A surface was investigated using both scanning tunneling microscopy and synchrotron-radiation photoemission, and it was shown that surface As atoms are in only one bonding configuration while surface Ga adopts two different bonding states.
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High‐frequency study of nonequilibrium transport in heterostructure bipolar transistors
TL;DR: In this paper, nonequilibrium transport in heterostructure bipolar transistors at a millimeter-wave band was studied and it was shown that increasing the total potential drop in the collector from 0.88 to 1.6 eV changes the measured intrinsic transit delay.
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The resistance of two quantum point contacts in series
Peter H. Beton,B.R. Snell,P. C. Main,A J M Neves,John Owers-Bradley,Laurence Eaves,Mohamed Henini,O.H. Hughes,S. P. Beaumont,C. D. W. Wilkinson +9 more
TL;DR: In this article, the resistance of two quantum point contacts (QPCs) in series is investigated experimentally and the voltage is measured both across and in between the series pair, and the normalised transmission coefficient, T, for ballistic transport is determined from the data using simple theory.