P
Peter H. Beton
Researcher at University of Nottingham
Publications - 272
Citations - 11056
Peter H. Beton is an academic researcher from University of Nottingham. The author has contributed to research in topics: Quantum tunnelling & Magnetic field. The author has an hindex of 53, co-authored 266 publications receiving 9576 citations. Previous affiliations of Peter H. Beton include University of Manchester & Queen Mary University of London.
Papers
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Magnetic-field dependence of the electrical characteristics of a gated resonant-tunneling diode.
TL;DR: In this paper, the authors investigated the low-temperature I(V) characteristics of a gated submicrometer resonant-tunneling diode in the presence of a magnetic field applied perpendicular to the tunnel barriers.
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Mesoscopic effects in resonant tunnelling diodes
J. W. Sakai,N. La Scala,P. C. Main,Peter H. Beton,T.J. Foster,Andre K. Geim,Laurence Eaves,Mohamed Henini,G. Hill,M. A. Pate +9 more
TL;DR: In this article, the authors investigated resonant tunnelling in GaAs/(AlGa)As heterostructures which have been fabricated into square mesas 6 x 6 mum.
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Selection of Adlayer Patterns of 1,3-Dithia Derivatives of Ferrocene by the Nature of the Solvent
Prithwidip Saha,Vinithra Gurunarayanan,Vladimir V. Korolkov,Prema G. Vasudev,Ramesh Ramapanicker,Peter H. Beton,Thiruvancheril G. Gopakumar +6 more
TL;DR: In this paper, the growth patterns of 2-ferrocenyl-1,3-dithiolane (Fcs) were studied on the basal plane of highly oriented pyrolytic graphite (HOPG) using atomic force microscopy and scanning tunneling microscopy (STM).
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Resonant tunnelling through a single impurity in high magnetic fields: Probing a two-dimensional electron gas on a nanometre scale
TL;DR: In this paper, the properties of the two-dimensional electron gas formed at the emitter barrier of a resonant tunnelling diode were studied in high magnetic fields, where the electrons formed quantum dots in the disordered potential due to unscreened donors in the depleted collector contact.
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Vertical transport in multilayer semiconductor structures
TL;DR: The design of multilayer semiconductor systems, grown by MBE or MOCVD, has made possible new studies of tunnelling, hot-electron injection, avalanching, photoresponse and other phenomena in III-V semiconductors as discussed by the authors.