Showing papers by "Peter Hacke published in 1999"
TL;DR: In this paper, the authors performed C-V profiling of Al0.14Ga0.86N/GaN heterojunctions and found that a heterojunction with the GaN layer on top increases the electron concentration at the Al0, 14, GaN interface, while the reversed structure with the GAs on top decreases it, attributed to the presence of a piezoelectric field redistributing the electrons in the heterostructure.
Abstract: C–V profiling of Al0.14Ga0.86N/GaN heterojunctions was performed. It was found that a heterojunction with the Al0.14Ga0.86N layer on top increases the electron concentration at the Al0.14Ga0.86N/GaN interface, while the reversed structure with the GaN layer on top decreases it. In accordance with this result, an Al0.14Ga0.86N/GaN double heterojunction was found to experience a strongly asymmetric electron distribution with an enhancement of the electron concentration at the interface closest to the sample surface. This effect is attributed to the presence of a piezoelectric field redistributing the electrons in the heterostructure.
25 citations