Showing papers by "Peter Hacke published in 2012"

Influence of Impurities in Module Packaging on Potential-Induced Degradation

Abstract: Chemical compounds were added into crystalline silicon cell mini modules, including in the encapsulant, interfaces, and glass, to determine their effect on potential-induced degradation (PID). Fe, either in the glass or at the glass/encapsulant interface, was found to be correlated with increased PID, but the difference in module power loss was not statistically significant compared to controls. Additions of Cu, Cr, Pb, Sn, Ag, and Na compounds to either the encapsulant or at the glass/encapsulant interface did not appear correlated with PID. Lock-in thermography on bare cells affected by PID removed from the mini modules show highly localized areas of junction breakdown, and SIMS analysis indicates localized impurities as well, though a spatial relation between the two was not established. Deposition of a conductive layer on the front surface of the cell, either with semitransparent Ta or Poly 3,4-ethylenedioxythiophene (PEDOT), eliminated PID when the cells were stressed at -1000 V bias, 50 degrees C, with the glass face grounded for 140 h.

The value proposition for high lifetime (p-type) and thin silicon materials in solar PV applications

Abstract: Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so - polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.