We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.

http://science.sciencemag.org/content/sci/306/5696/666.full.pdf

Electric Field Effect in Atomically Thin Carbon Films

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

Diamond-like carbon (DLC) is a metastable form of amorphous carbon with significant sp3 bonding. DLC is a semiconductor with a high mechanical hardness, chemical inertness, and optical transparency. This review will describe the deposition methods, deposition mechanisms, characterisation methods, electronic structure, gap states, defects, doping, luminescence, field emission, mechanical properties and some applications of DLCs. The films have widespread applications as protective coatings in areas, such as magnetic storage disks, optical windows and micro-electromechanical devices (MEMs).

/pdf/diamond-like-amorphous-carbon-3pczopr0z7.pdf

Diamond-like amorphous carbon

Raman microspectroscopy of soot and related carbonaceous materials: Spectral analysis and structural information

As the technology for diamond film preparation by plasma-assisted CVD and related procedures has advanced, Raman spectroscopy has emerged as one of the principal characterization tools for diamond materials. Cubic diamond has a single Raman-active first order phonon mode at the center of the Brillouin zone. The presence of sharp Raman lines allows cubic diamond to be recognized against a background of graphitic carbon and also to characterize the graphitic carbon. Small shifts in the band wavenumber have been related to the stress state of deposited films. The effect is most noticeable in diamond films deposited on hard substrates such as alumina or carbides. The Raman line width varies with mode of preparation of the diamond and has been related to degree of structural order. The Raman spectrum of hexagonal diamond (lonsdaleite) is distinct from that of the cubic diamond and allows it to be recognized.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S0884291400004441

Characterization of diamond films by Raman spectroscopy

The deposition of amorphous hydrogenated hard carbon (a–C:H) thin films from benzene vapor in a rf plasma is described. a–C:H was deposited on glass, quartz, Si, Ge, and GaAs. Negative self‐bias VB and gas pressure P are shown to be the two significant parameters for an accurate control of the deposition process. The dependence of growth rate and deposition temperature on VB and P was determined; this gives an empirical relation for the average energy E of the ions forming the thin films. Refractive index (1.85–2.20 in the IR), optical gap (0.8–1.8 eV) and density (1.5–1.8 g/cm3) of a–C:H was measured. The optical gap varies linearly with the content of bonded hydrogen in the films. The density of a–C:H is proportional to the average ion energy E. We demonstrate the application of a–C:H as antireflective coating on Ge for 10.6 μm (reflection <0.2% at 10.6 μm) and as terminating layer of an optical multilayer stack.

rf‐plasma deposited amorphous hydrogenated hard carbon thin films: Preparation, properties, and applications

Oriented CVD diamond films: twin formation, structure and morphology

Hydrogenated amorphous (a‐C:H) films were prepared by rf‐plasma deposition from benzene vapor. Complete optical absorption spectra from the UV to the IR (0.2–20.0 μm) have been measured. The optical gap depends linearly on hydrogen content and Eopt can be varied between 0.8 and 1.8 eV. For energies below Eopt the films are almost transparent and absorption is especially low in the 2–6‐μm region (e.g., α=15 cm−1 at λ=2.8 μm). Sharp C–H stretch absorption bands occur near 3.4 μm, giving insight into the microstructure of the films. A newly reported weak band at 3.03 μm is first evidence for C–C triple bonds (sp1 hybridization) in a‐C:H, where sp3 (single) and sp2 (double) C–C bonds dominate.

Hard carbon coatings with low optical absorption

Chemical vapour deposition and characterization of smooth {100}-faceted diamond films

Structure and morphology of polycrystalline diamond films prepared by chemical vapor deposition (CVD) have been studied using x‐ray texture analysis, angle‐resolved optical reflection, and scanning electron microscopy. The films under investigation exhibit a pronounced 110 fiber texture, i.e., a preferential alignment of {110} planes perpendicular to the growth direction. By thinning a 180‐μm‐thick CVD diamond film in an oxygen discharge the dependence of the degree of 110 texture on the film thickness has been investigated. It was found that the crystals formed at the beginning of the film growth are randomly oriented, and that a preferential orientation of {110} planes develops with increasing film thickness. Computer simulations show that this behavior can be explained by evolutionary selection, i.e., competing growth of differently oriented crystals, which implies that 〈110〉 is the direction of fastest growth. In addition, angle‐resolved optical reflection and scanning electron micrographs show that t...

Peter Koidl

Papers

rf‐plasma deposited amorphous hydrogenated hard carbon thin films: Preparation, properties, and applications

Oriented CVD diamond films: twin formation, structure and morphology

Hard carbon coatings with low optical absorption

Chemical vapour deposition and characterization of smooth {100}-faceted diamond films

Texture formation in polycrystalline diamond films