scispace - formally typeset
P

Peter Rudolph

Researcher at Institut für Kristallzüchtung

Publications -  105
Citations -  1909

Peter Rudolph is an academic researcher from Institut für Kristallzüchtung. The author has contributed to research in topics: Dislocation & Magnetic field. The author has an hindex of 22, co-authored 105 publications receiving 1826 citations. Previous affiliations of Peter Rudolph include Humboldt University of Berlin.

Papers
More filters
Journal ArticleDOI

Basic problems of vertical Bridgman growth of CdTe

TL;DR: In this paper, the influence of the melt structure, from which an associated state is assumed, on the crystalline quality, the composition instability in conventional ampoules, the segregation behaviour of the excess component (normally tellurium), the axial distribution of inclusions and precipitations, the mass transport with an additional cadmium source, and the correlation between the vacancy and impurity segregation and the substrate purity as a function of axial crystal position.
Journal ArticleDOI

Non-stoichiometry related defects at the melt growth of semiconductor compound crystals: a review

TL;DR: An overview on the defect knowledge in IV-VI (PbTe), II-VI and CdTe and III-V (GaAs, InP) semiconductor compound crystals in dependence on non-stoichiometric growth conditions from the melt is given in this paper.
Journal ArticleDOI

Travelling magnetic fields applied to bulk crystal growth from the melt: The step from basic research to industrial scale

TL;DR: In this article, the main pros and cons of various types of magnetic fields in crystal growth are discussed and the advantages of travelling magnetic fields are presented. And the target of the current KRIST MAG project is devoted to the development of an internal heater-magnet module for coupled generation of temperature and a travelling magnetic field, suitable for incorporation into industrial Czochralski pullers and vertical gradient freeze equipments.
Journal ArticleDOI

Distribution and genesis of inclusions in CdTe and (Cd,Zn)Te single crystals grown by the Bridgman method and by the travelling heater method

TL;DR: In this article, the density and distribution of inclusions of the excess component in CdTe and (Cd,Zn)Te crystals grown by the Bridgman method and by the travelling heater method (THM) have been investigated by transmission infrared (IR) microscopy.
Journal ArticleDOI

A brief history of defect formation, segregation, faceting, and twinning in melt-grown semiconductors

TL;DR: In this article, a historical review of the development of knowledge of defect formation in semiconductor crystals is given, starting with zero-dimensional defect types, especially native point defects in Si and GaAs.