Showing papers by "Petko Vitanov published in 2002"
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TL;DR: In this paper, the results from XPS and XRD measurement show that, at high thermal annealing at 700-800°C, there is a penetration of the Si atoms from the substrate into the layer, forming silicon oxide.
22 citations
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01 Jan 2002TL;DR: In hot climates, the use of PV modules is sometimes problematic, since their efficiency normally decreases with increasing solar cell temperature as mentioned in this paper, and the temperature behavior of PV module is thus important when considering their application for large-scale economical power generation.
Abstract: In hot climates, the use of PV modules is sometimes problematic, since their efficiency normally decreases with increasing solar cell temperature. The temperature behavior of PV modules is thus important when considering their application for large-scale economical power generation.