Perovskite solar cells (PSCs) based on the regular n–i–p device architecture have reached above 25% certified efficiency with continuously reported improvements in recent years. A key common factor for these recent breakthroughs is the development of SnO2 as an effective electron transport layer in these devices. In this article, the key advances in SnO2 development are reviewed, including various deposition approaches and surface treatment strategies, to enhance the bulk and interface properties of SnO2 for highly efficient and stable n–i–p PSCs. In addition, the general materials chemistry associated with SnO2 along with the corresponding materials challenges and improvement strategies are discussed, focusing on defects, intrinsic properties, and impact on device characteristics. Finally, some SnO2 implementations related to scalable processes and flexible devices are highlighted, and perspectives on the future development of efficient and stable large‐scale perovskite solar modules are also provided.

Advances in SnO2 for Efficient and Stable n–i–p Perovskite Solar Cells

The interfacial properties for the buried junctions of the perovskite solar cells (PSCs) play a crucial role for the further enhancement of the power conversion efficiency (PCE) and stability of devices. Delicate manipulation of the interface properties such as the defect density, energy alignment, perovskite film quality, etc., guarantees efficient extraction and transport of photogenerated carriers. Herein, chlorobenzenesulfonic potassium salts are presented as a novel multifunctional agent to modify the buried tin oxide (SnO2)/perovskite interface for regular PSCs. The increasing number of carbon‐chlorine bonds (CCl) in 2,4,5‐trichlorobenzenesulfonic potassium (3Cl‐BSAK) exhibit efficient interaction with uncoordinated Sn, effectively filling oxygen vacancies in the SnO2 surface. Importantly, synergistic effects of the functional group‐rich organic anions and the potassium ion are achieved for reduced defect density, carrier recombination, and hysteresis. A champion PCE of 24.27% and the open‐circuit voltage (VOC) up to 1.191 V for modified devices are obtained. The unencapsulated devices maintain 80% of their initial PCE after aging at 80 °C for 800 h in the atmosphere and 95% after aging for 100 d. With 3Cl‐BSAK decoration, a high efficiency semitransparent PSC with a PCE of 12.83% and an average visible light transmittance (AVT) over 27% is also obtained.

Chlorobenzenesulfonic Potassium Salts as the Efficient Multifunctional Passivator for the Buried Interface in Regular Perovskite Solar Cells

Modification of SnO2 Electron Transport Layer: Brilliant Strategies to Make Perovskite Solar Cells Stronger

Inorganic perovskite materials are possible candidates for conversion of solar energy to electrical energy due to their high absorption coefficient. Perovskite solar cells (PSCs) introduced a new type of device structure that has attention due to better efficiencies and interest in PSCs that has been increasing in recent years. Halide perovskite materials such as CsPbIBr2 show remarkable optical and structural performance with their better physical properties. Perovskite solar cells are a possible candidate to replace conventional silicon solar panels. In the present study, CsPbIBr2 perovskite materials’ thin films were prepared for light-absorbing application. Five thin films were deposited on the glass substrates by subsequent spin-coating of CsI and PbBr2 solutions, subsequently annealed at different temperature values (as-deposited, 100, 150, 200 and 250 °C) to get CsPbIBr2 thin films with a better crystal structure. Structural characterizations were made by using X-ray diffraction. CsPbIBr2 thin films were found to be polycrystalline in nature. With increasing annealing temperature, the crystallinity was improved, and the crystalline size was increased. Optical properties were studied by using transmission data, and by increasing annealing temperature, a small variation in optical band gap energy was observed in the range of 1.70–1.83 eV. The conductivity of CsPbIBr2 thin films was determined by a hot probe technique and was found to have little fluctuating response toward p-type conductivity, which may be due to intrinsic defects or presence of CsI phase, but a stable intrinsic nature was observed. The obtained physical properties of CsPbIBr2 thin films suggest them as a suitable candidate as a light-harvesting layer. These thin films could be an especially good partner with Si or other lower band gap energy materials in tandem solar cells (TSC). CsPbIBr2 material will harvest light having energy of ∼1.7 eV or higher, while a lower energy part of the solar spectrum will be absorbed in the partner part of the TSC.

Qi Zhang

Papers

Batch chemical bath deposition of large-area SnO2 film with mercaptosuccinic acid decoration for homogenized and efficient perovskite solar cells