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Qin Lei

Researcher at Arizona State University

Publications -  76
Citations -  2385

Qin Lei is an academic researcher from Arizona State University. The author has contributed to research in topics: Voltage & Inverter. The author has an hindex of 17, co-authored 73 publications receiving 2029 citations. Previous affiliations of Qin Lei include Huazhong University of Science and Technology & General Electric.

Papers
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Proceedings ArticleDOI

Novel SVPWM switching pattern for high efficiency 15KW current-fed quasi-Z-source inverter in HEV motor drive application

TL;DR: In this paper, the authors proposed a modified SVPWM control method for the current-fed QZSI, where different PWM sequences can lead to different switching loss, current ripple, total harmonic distortion, and also the voltage spike on the switching devices.
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High-dv/dt-Immune Fine-Controlled Parameter-Adaptive Synchronous Gate Driving for GaN-Based Secondary Rectifier in EV On-Board Charger

TL;DR: In this article, a gate-driven synchronous rectifier (SR) was proposed to reduce the conduction loss and improve the system efficiency compared with the conventional diode bridge rectifier.
Proceedings ArticleDOI

PWAM boost-converter-inverter system for EV engine starter/alternator

TL;DR: In this paper, a 1kW boost-converter-inverter system was proposed for electrical vehicle motor drive applications, which achieved high efficiency, high power density, high temperature and low cost.
Proceedings ArticleDOI

Discontinuous operation modes of current-fed Quasi-Z-Source inverter

TL;DR: In this paper, the authors analyzed the characteristics of discontinuous operation modes, and derived the critical conditions for these new modes under different control strategies, and the simulation and experiment results were given to verify the theoretical analysis.
Journal ArticleDOI

A Universal Block of Series Connected SiC MOSFETs Using Current Source Gate Driver

TL;DR: In this article, the authors proposed a current source gate driver for series connected SiC MOSFETs, forming a universal block of series-connected SiC devices with higher voltage rating.