R
R. Ben Chaabane
Researcher at University of Monastir
Publications - 24
Citations - 304
R. Ben Chaabane is an academic researcher from University of Monastir. The author has contributed to research in topics: Dielectric spectroscopy & Absorption spectroscopy. The author has an hindex of 9, co-authored 24 publications receiving 238 citations.
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Development of an impedimetric non enzymatic sensor based on ZnO and Cu doped ZnO nanoparticles for the detection of glucose
TL;DR: In this article, pure and copper-doped Zinc oxide nanoparticles (Cu-ZO) have been prepared by sol gel method, and the electrochemical behavior of the electrodes were evaluated by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS).
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Study of organic thin film transistors based on nickel phthalocyanine: effect of annealing
TL;DR: In this article, the effects of annealing on the electrical properties of nickel phthalocyanine (NiPc) OTFTs were studied based upon an analysis of different carrier exchange mechanisms occurring at metal/organic material interface.
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Calixarene membranes on semiconductor substrates for E.I.S. chemical sensors
R. Mlika,H. Ben Ouada,R. Ben Chaabane,M. Gamoudi,G. Guillaud,Nicole Jaffrezic-Renault,Roger Lamartine +6 more
TL;DR: In this article, thin ptert-butyl calix[4]arene and p-tertbutyl calcix[6]arenes films were deposited using the technique of thermal evaporation under vacuum to fabricate chemical microsensors based on an E.I.S. (Electrolyte-Insulator-Semiconductor) structure.
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Optical and electrical study of chromogenic calix(4)arene derivatives
A. Rouis,A. Rouis,Cherif Dridi,R. Ben Chaabane,Joel Davenas,S. Aeiyach,H. Ben Ouada,I. Dumazet-Bonnamour,Hatem Halouani +8 more
TL;DR: In this paper, azo-calix[4]arene layers between indium-thin oxide (ITO) and (Al) contacts have been elaborated and measured.
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Study of the membrane morphology and investigation of sensitivity to ions for sensors based on calixarenes
TL;DR: In this article, the ptert-Butyl calix[ n ]arene (n = 4 and 8) was used as a sensitive membrane incorporating the receptor molecule on the top of the gate oxide, which was thermally evaporated on the oxide to form a semiconductor-oxide-film capacitance structure.