This review is focused on the latest developments in continuous-wave (CW) photomixing for Terahertz (THz) generation. The first part of the paper explains the limiting factors for operation at high frequencies ∼ 1 THz, namely transit time or lifetime roll-off, antenna (R)-device (C) RC roll-off, current screening and blocking, and heat dissipation. We will present various realizations of both photoconductive and p-i-n diode–based photomixers to overcome these limitations, including perspectives on novel materials for high-power photomixers operating at telecom wavelengths (1550 nm). In addition to the classical approach of feeding current originating from a small semiconductor photomixer device to an antenna (antenna-based emitter, AE), an antennaless approach in which the active area itself radiates (large area emitter, LAE) is discussed in detail. Although we focus on CW photomixing, we briefly discuss recent results for LAEs under pulsed conditions. Record power levels of 1.5 mW average power and conversion efficiencies as high as 2 × 10−3 have been reached, about 2 orders of magnitude higher than those obtained with CW antenna-based emitters. The second part of the paper is devoted to applications for CW photomixers. We begin with a discussion of the development of novel THz optics. Special attention is paid to experiments exploiting the long coherence length of CW photomixers for coherent emission and detection of THz arrays. The long coherence length comes with an unprecedented narrow linewidth. This is of particular interest for spectroscopic applications, the field in which THz research has perhaps the highest impact. We point out that CW spectroscopy systems may potentially be more compact, cheaper, and more accurate than conventional pulsed systems. These features are attributed to telecom-wavelength compatibility, to excellent frequency resolution, and to their huge spectral density. The paper concludes with prototype experiments of THz wireless LAN applications. For future telecommunication systems, the limited bandwidth of photodiodes is inadequate for further upshifting carrier frequencies. This, however, will soon be required for increased data throughput. The implementation of telecom-wavelength compatible photomixing diodes for down-conversion of an optical carrier signal to a (sub-)THz RF signal will be required.

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Tunable, continuous-wave Terahertz photomixer sources and applications

Ultra-high bandwidth, negligible latency and seamless communication are envisioned as milestones that will revolutionize the way by which societies create, distribute and consume information. The remarkable expansion of wireless data traffic has advocated the investigation of suitable regimes in the radio spectrum to satisfy users’ escalating requirements and allow the exploitation of massive capacity and massive connectivity. To this end, the Terahertz (THz) frequency band (0.1-10 THz) has received noticeable attention in the research community as an ideal choice for scenarios involving high-speed transmission. As such, in this work, we present an up-to-date review paper to analyze key concepts associated with the THz system architecture. THz generation methods are first addressed by highlighting the recent progress in the devices technology. Moreover, the recently proposed channel models available for propagation at THz band frequencies are introduced. A comprehensive comparison is then presented between the THz wireless communication and its other contenders. In addition, several applications of THz communication are discussed taking into account various scales. Further, we highlight the milestones achieved regarding THz standardization activities. Finally, a future outlook is provided by presenting and envisaging several potential use cases and attempts to guide the deployment of the THz frequency band.

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Terahertz Band: The Last Piece of RF Spectrum Puzzle for Communication Systems

There has been an increasing interest in photonic generation of RF signals in the millimeter-wave (30 GHz ∼ 300 GHz) and/or terahertz-wave (0.1 THz ∼ 10 THz) regions, and photodiodes play a key role in it. This paper reviews re- cent progress in the high-power RF photodiodes such as Uni- Traveling-Carrier-Photodiodes (UTC-PDs), which operate at these frequencies. Several approaches to increasing both the bandwidth and output power of photodiodes are discussed, and promising applications to broadband wireless communications and spectroscopic sensing are described. Photodiode chip is bonded to the substrate with the antenna. This is a symbolic figure of RF photonics in this article. Antenna

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High-power RF photodiodes and their applications

We report on advanced millimeter-wave (mm-wave) photonic components for broadband radio transmission. We have developed self-pulsating 60-GHz range quantum-dash Fabry-Perot mode-locked laser diodes (MLLD) for passive, i.e., unlocked, photonic mm-wave generation with comparably low-phase noise level of -76 dBc/Hz @ 100-kHz offset from a 58.8-GHz carrier. We further report on high-frequency 1.55-μm waveguide photodiodes (PD) with partially p-doped absorber for broadband operation (f3dB ~70-110 GHz) and peak output power levels up to +4.5 dBm @ 110 GHz as well as wideband antenna integrated photomixers for operation within 30-300 GHz and peak output power levels of -11 dBm @ 100 GHz and 6-mA photocurrent. We further present compact 60-GHz wireless transmitter and receiver modules for wireless transmission of uncompressed 1080p (2.97 Gb/s) HDTV signals utilizing the developed MLLD and mm-wave PD. Error-free (BER = 10-9, 231 - 1 PRBS, NRZ) outdoor wireless transmission of 3 Gb/s over 25 m is demonstrated, as well as wireless transmission of uncompressed HDTV signals in the 60-GHz band. Finally, an advanced 60-GHz photonic wireless system offering record data throughputs and spectral efficiencies is presented. For the first time, we demonstrate photonic wireless transmission of data throughputs up to 27.04 Gb/s (EVM 17.6%) using a 16-QAM OFDM modulation format resulting in a spectral efficiency as high as 3.86 b/s/Hz. Wireless experiments were carried out within the regulated 57-64-GHz band in a lab environment with a maximum transmit power of - 1 dBm and 23 dBi gain antennas for a wireless span of 2.5 m. This span can be extended to some 100 m when using high-gain antennas and higher transmit power levels.

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Millimeter-Wave Photonic Components for Broadband Wireless Systems

The design, experimental evaluation and performance of a Traveling-Wave Uni-Traveling Carrier photodiode for Terahertz generation are described and its advantages in terms of frequency response are demonstrated. The device delivered 148 microW at 457 GHz, 24 microW at 914 GHz when integrated with resonant antennas and 105 microW at 255 GHz, 30 microW at 408 GHz, 16 microW at 510 GHz and 10 microW at 612 GHz. Record levels of Terahertz figure of merit (PTHz/Popt2 in W(-1)) were achieved ranging from 1 W(-1) at 110 GHz to 0.0024 W(-1) at 914 GHz.

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Traveling-wave Uni-Traveling Carrier Photodiodes for continuous wave THz generation

A 02 A/W responsivity waveguide-uni-travelling carrier photodiode with a -3 dB electrical frequency 
response > 108 GHz is demonstrated Up to -5 dBm electrical power at 110 GHz, and 28 mA 
photocurrent (DC excitation) were detected The photodiode was also integrated with an antenna to 
permit a record breaking emission of up to 148 μW at 457 GHz and 25 μW at 914 GHz

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A high responsivity, broadband waveguide uni-travelling carrier photodiode

In this paper we present a review of our work on photonic synthesis of high spectral purity THz signals. This work includes novel developments on optical frequency comb generation (integrated, 2THz span, 25 GHz spacing), frequency locking of semiconductor lasers (1kHz channel stability, 10 ns switching time) and high speed photodetectors integrated with antennas (3dB bandwidth > 108 GHz, 0.2 A/W responsivity , 148 muW output power at 457 GHz)

Photonic synthesis of THz signals

Photodiodes and Reflective Electroabsorption Modulators for mm-wave and UWB Applications

Ru precursors IPCPRu and IBCPRu have been developed as alternatives to DMRu. Stability trials and atmospheric pressure MOVPE growth investigations have led to their successful application for Ru doped InP current blocking layers in laser devices.

R. Firth

Papers

A high responsivity, broadband waveguide uni-travelling carrier photodiode

Photonic synthesis of THz signals

Photodiodes and Reflective Electroabsorption Modulators for mm-wave and UWB Applications

The development and application of novel Ru precursors for atmospheric pressure MOVPE growth of Ru doped current blocking layers