Science and technologies based on terahertz frequency electromagnetic radiation (100 GHz–30 THz) have developed rapidly over the last 30 years. For most of the 20th Century, terahertz radiation, then referred to as sub-millimeter wave or far-infrared radiation, was mainly utilized by astronomers and some spectroscopists. Following the development of laser based terahertz time-domain spectroscopy in the 1980s and 1990s the field of THz science and technology expanded rapidly, to the extent that it now touches many areas from fundamental science to 'real world' applications. For example THz radiation is being used to optimize materials for new solar cells, and may also be a key technology for the next generation of airport security scanners. While the field was emerging it was possible to keep track of all new developments, however now the field has grown so much that it is increasingly difficult to follow the diverse range of new discoveries and applications that are appearing. At this point in time, when the field of THz science and technology is moving from an emerging to a more established and interdisciplinary field, it is apt to present a roadmap to help identify the breadth and future directions of the field. The aim of this roadmap is to present a snapshot of the present state of THz science and technology in 2017, and provide an opinion on the challenges and opportunities that the future holds. To be able to achieve this aim, we have invited a group of international experts to write 18 sections that cover most of the key areas of THz science and technology. We hope that The 2017 Roadmap on THz science and technology will prove to be a useful resource by providing a wide ranging introduction to the capabilities of THz radiation for those outside or just entering the field as well as providing perspective and breadth for those who are well established. We also feel that this review should serve as a useful guide for government and funding agencies.

https://iopscience.iop.org/article/10.1088/1361-6463/50/4/043001/pdf

The 2017 terahertz science and technology roadmap

The 2016 terahertz science and technology roadmap

Microwave photonics (MWP) is an emerging field in which radio frequency (RF) signals are generated, distributed, processed and analyzed using the strength of photonic techniques. It is a technology that enables various functionalities which are not feasible to achieve only in the microwave domain. A particular aspect that recently gains significant interests is the use of photonic integrated circuit (PIC) technology in the MWP field for enhanced functionalities and robustness as well as the reduction of size, weight, cost and power consumption. This article reviews the recent advances in this emerging field which is dubbed as integrated microwave photonics. Key integrated MWP technologies are reviewed and the prospective of the field is discussed.

Integrated microwave photonics

Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

This review is focused on the latest developments in continuous-wave (CW) photomixing for Terahertz (THz) generation. The first part of the paper explains the limiting factors for operation at high frequencies ∼ 1 THz, namely transit time or lifetime roll-off, antenna (R)-device (C) RC roll-off, current screening and blocking, and heat dissipation. We will present various realizations of both photoconductive and p-i-n diode–based photomixers to overcome these limitations, including perspectives on novel materials for high-power photomixers operating at telecom wavelengths (1550 nm). In addition to the classical approach of feeding current originating from a small semiconductor photomixer device to an antenna (antenna-based emitter, AE), an antennaless approach in which the active area itself radiates (large area emitter, LAE) is discussed in detail. Although we focus on CW photomixing, we briefly discuss recent results for LAEs under pulsed conditions. Record power levels of 1.5 mW average power and conversion efficiencies as high as 2 × 10−3 have been reached, about 2 orders of magnitude higher than those obtained with CW antenna-based emitters. The second part of the paper is devoted to applications for CW photomixers. We begin with a discussion of the development of novel THz optics. Special attention is paid to experiments exploiting the long coherence length of CW photomixers for coherent emission and detection of THz arrays. The long coherence length comes with an unprecedented narrow linewidth. This is of particular interest for spectroscopic applications, the field in which THz research has perhaps the highest impact. We point out that CW spectroscopy systems may potentially be more compact, cheaper, and more accurate than conventional pulsed systems. These features are attributed to telecom-wavelength compatibility, to excellent frequency resolution, and to their huge spectral density. The paper concludes with prototype experiments of THz wireless LAN applications. For future telecommunication systems, the limited bandwidth of photodiodes is inadequate for further upshifting carrier frequencies. This, however, will soon be required for increased data throughput. The implementation of telecom-wavelength compatible photomixing diodes for down-conversion of an optical carrier signal to a (sub-)THz RF signal will be required.

/pdf/tunable-continuous-wave-terahertz-photomixer-sources-and-rulvqaamg0.pdf

Tunable, continuous-wave Terahertz photomixer sources and applications

The design, experimental evaluation and performance of a Traveling-Wave Uni-Traveling Carrier photodiode for Terahertz generation are described and its advantages in terms of frequency response are demonstrated. The device delivered 148 microW at 457 GHz, 24 microW at 914 GHz when integrated with resonant antennas and 105 microW at 255 GHz, 30 microW at 408 GHz, 16 microW at 510 GHz and 10 microW at 612 GHz. Record levels of Terahertz figure of merit (PTHz/Popt2 in W(-1)) were achieved ranging from 1 W(-1) at 110 GHz to 0.0024 W(-1) at 914 GHz.

/pdf/traveling-wave-uni-traveling-carrier-photodiodes-for-4jp11ujwot.pdf

Traveling-wave Uni-Traveling Carrier Photodiodes for continuous wave THz generation

We present theoretical analysis and experimental results for an optimized Traveling Wave Uni-Traveling Carrier Photodiode for continuous wave millimeter-wave and Terahertz generation. The devices employed a mode-converting waveguide for efficient coupling from a lensed fiber. A DC responsivity of 0.53 A/W at a wavelength of 1.55 μm and 3-dB electrical bandwidth of 108 GHz were obtained from temperature-controlled coplanar waveguide-integrated devices together with record levels of power from a photomixer in the millimeter-wave range with 1 mW at 200 GHz. High levels of Terahertz output power from broadband, heat sink-mounted antenna-integrated devices were measured with 5 μW at 1.02 THz.

Continuous Wave Terahertz Generation From Ultra-Fast InP-Based Photodiodes

A 02 A/W responsivity waveguide-uni-travelling carrier photodiode with a -3 dB electrical frequency 
response > 108 GHz is demonstrated Up to -5 dBm electrical power at 110 GHz, and 28 mA 
photocurrent (DC excitation) were detected The photodiode was also integrated with an antenna to 
permit a record breaking emission of up to 148 μW at 457 GHz and 25 μW at 914 GHz

/pdf/a-high-responsivity-broadband-waveguide-uni-travelling-1yac6r8bf9.pdf

A high responsivity, broadband waveguide uni-travelling carrier photodiode

We demonstrate the generation of broadband terahertz (THz) frequency radiation from photoconductive emitters formed from Fe-doped InGaAs (Fe:InGaAs), grown by metal-organic chemical vapor deposition, following pulsed (femtosecond) laser excitation at wavelengths ranging from 830 nm to 1.55 μm. The Fe is incorporated epitaxially during growth, giving precise control over the doping level. Using both single-crystal ZnTe and GaP electro-optic detectors over the same wavelength range, the emission spectra from several Fe:InGaAs wafers with different Fe content were measured, with THz emission from all wafers showing bandwidths in excess of 2.0 THz. The THz output power was found to be strongly dependant on the Fe content, the thickness of the Fe:InGaAs layer, and the excitation wavelength.

Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to 1.55 μm excitation

We present the first hybrid-integrated optical phase-lock loop (OPLL) for use in high spectral purity photonic terahertz sources. We have achieved the necessary short loop delay to lock a 1-MHz linewidth slave laser by hybrid integration of the slave laser and photodetector on a silicon motherboard with silica optical waveguides and combining this with a custom-designed low-delay electronic loop filter circuit. The laser and photodetectors are InP-based and are flip chip bonded to silicon daughter boards, which are in turn attached to the motherboard. Delay between the slave laser and photodiode was approximately 50 ps. The heterodyne between slave and master sources has a linewidth of less than 1 kHz and achieved phase noise less than -80 dBc/Hz at an offset of 10 kHz. The slave laser can be offset from the master source by 2-7 GHz, using a microwave oscillator. This integrated OPLL circuit was used with an optical comb source and an injection-locked laser comb filter to generate high spectral purity signals at frequencies up to 300 GHz with linewidths <;1 kHz and powers of about -20 dBm, while the two integrated lasers could deliver a tunable heterodyne signal at frequencies up to 1.8 THz.

Michael J. Robertson

Papers

Traveling-wave Uni-Traveling Carrier Photodiodes for continuous wave THz generation

Continuous Wave Terahertz Generation From Ultra-Fast InP-Based Photodiodes

A high responsivity, broadband waveguide uni-travelling carrier photodiode

Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to 1.55 μm excitation

Hybrid Integrated Optical Phase-Lock Loops for Photonic Terahertz Sources