R
R. L. Willett
Researcher at Alcatel-Lucent
Publications - 35
Citations - 4057
R. L. Willett is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Transistor & Filling factor. The author has an hindex of 19, co-authored 34 publications receiving 3915 citations.
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Journal ArticleDOI
Experimental demonstration of Fermi surface effects at filling factor 5/2.
TL;DR: Using small wavelength surface acoustic waves (SAW) on ultrahigh mobility heterostructures, Fermi surface properties are detected at 5/2 filling factor at temperatures higher than those at which the quantum Hall state forms.
Journal ArticleDOI
Transition in the Correlated 2D Electron System Induced by a Periodic Density Modulation
Journal ArticleDOI
Anisotropic disorder in high-mobility 2D heterostructures and its correlation to electron transport.
TL;DR: The native surface properties reflect a prevalent, anisotropic disorder affecting 2D electron conduction, and are orthogonal to the stripes theoretically proposed to explain high Landau level transport anisotropies.
Proceedings ArticleDOI
Scanning Single Electron Transistor Microscopy: Imaging Individual Charges
M. J. Yoo,T.A Fulton,H. F. Hess,R. L. Willett,L. N. Dunkleberger,R. J. Chichester,Loren Pfeiffer,K. W. West +7 more
TL;DR: The single-electron transistor scanning electrometer (SETSEEM) as mentioned in this paper is a probe microscope capable of mapping static electric fields and charges with 100-nanometer spatial resolution and a charge sensitivity of a small fraction of an electron.
Journal ArticleDOI
Molecular-scale metal wires
TL;DR: In this article, a technique employing material deposition into nanometer-scale stencils for the fabrication of continuous wires with precisely controlled widths below 10 nm was introduced. But this technique is not suitable for fabrication of wires with diameters larger than 3 nm.