In this paper, a substrate-dependent lumped-element model for ceramic multilayer capacitors is presented. The height and dielectric constant of a substrate have a significant impact on the frequency response of a chip capacitor, and these effects cannot be treated independently from the capacitor model. Rather, the equivalent-circuit parameters in the model must be made to vary in accordance with changes in the substrate. The model presented in this paper is suitable for microstrip-mounted components, and has been applied up to 10 GHz for values from 0.5 pF to 0.47 /spl mu/F, and for FR-4 substrates ranging in height from 5 to 62 mil. The modeling and extraction procedure is demonstrated for 0805- and 1206-style capacitors.

A substrate-dependent CAD model for ceramic multilayer capacitors

This paper provides a new test technique for detecting defects in Through Silicon Via (TSV) in 3-D ICs and presents a substrate-dependent equivalent electrical model for TSVs. Process-related defects that affect the functional electrical performance of the TSV are identified, and fault models are developed for each individual defect. The fault models are integrated into the equivalent electrical model of the TSV for testing. Our test technique uses an RF carrier signal modulated with a multi-tone signal with added Gaussian white noise to synthesize the test stimulus; the peak-to-average ratio is measured as output response. We find a significant difference in peak-to-average ratio between defect-free and defective TSVs. Our test technique is very sensitive to small defects in these nanostructures, thereby identifying the defects with high accuracy.

Fault Modeling and Multi-Tone Dither Scheme for Testing 3D TSV Defects

A means for characterizing the effective series resistance (ESR) of low loss capacitors at radio frequencies with only a few measurements is suggested. It is necessary that the dielectric have a known loss/frequency relationship. At low frequencies, D should be constant, or change at a constant rate, as many dielectrics do. At high frequencies, the capacitor loss should be attributable to skin effect in the conductors and must not exhibit parallel or dimensional resonances in the frequency range of interest, usually a phenomenon of high permittivity dielectrics. >

Capacitor loss at radio frequencies

This paper presents modeling, simulation and experimental measurements of copper-based TSV for 60-GHz applications. We have considered different via dimensions for modeling and simulations and performed simulations to validate electrical performance of the TSV with varying data rates in addition to providing eye diagram analysis. To validate the electrical model, we performed TSV characterization by fabricating an interconnect using copper material on a silicon substrate.

3-D Copper based TSV for 60-GHz applications

The quality factor, equivalent series resistance, and the · frequency of self-resonance are parts of the specifications of high-Q ceramic capacitors. These quantities are obtained from measurements on transmission lines with the capacitor in series or shunt. Part A: Resonant structures designed to extend the Electronics Industries Association (EIA) standard RS-483 downwards below 10 MHz and upwards above 3 GHz are discussed. For the low-frequency lines, a rule for extrapolating Q values outside the range of data is proposed. The rule is based on the frequency-dependence of the input/output coupling. The high-frequency line incorporates a method of tuning which eliminates the need for interpolation or extrapolation. It is particularly suited to measuring small parallel-plate capacitors which can be mounted on a flat shorting plate. Part B: It is shown that the first self-resonance, when viewed in terms of a series R, L, C equivalent circuit, is a poorly defined quantity. It is not always observable; it may not exist; and it may be of minor importance to design applications, it is proposed that the resonance specification of capacitors should be the first parallel resonance, defined as the first maximum in dissipation loss.

Measurement of the Characteristics of High-Q Ceramic Capacitors

No reliable instrumentation systems have been available for the measurement of capacitor properties, particularly Q-factor, in applications requiring operation in the 100-1000 MHz range. The production of large numbers of multilayer ceramic chip capacitors for such special use is a very recent development. The need for reliable measurement equipment is increasing both for purposes of device evaluation and device development. A high-Q transmission line has been constructed, and a mathematical system has been devised for employing that line in a resonant mode to determine capacitor parameters, and particularly Q-factor, at the range up to and including microwave frequencies. The device produces accurate reliable data. The equipment can be reproduced and the system can be used in analysis and evaluation with a degree of confidence not possible in the past.

R. Lafferty

Papers

High-Frequency Measurement of Q-Factors of Ceramic Chip Capacitors