R. Reif

TL;DR: A system and a procedure using chemical vapor deposition of silane at very low pressures (<10−2 Torr) have been developed for depositing uniform, specular silicon epitaxial films both with and without plasma enhancement at temperatures as low as 650 °C as mentioned in this paper.

TL;DR: In this article, it was found that the predeposition in situ cleaning of the surface, rather than any plasma effects during the deposition, was essential for achieving epitaxial growth at this low temperature.

TL;DR: The kinetic data suggest that nonplasma depositions at 750-850°C (pressure <12 mtorr) are rate limited by the incorporation of adatoms into the growing crystal structure as mentioned in this paper.

TL;DR: In this paper, the growth rate of low temperature (850°C) silicon epitaxial films was studied as a function of pressure and temperature for a very low pressure (<12 mtorr) chemical vapor deposition process both with and without plasma enhancement.