scispace - formally typeset
Search or ask a question

Showing papers by "Rajiv V. Joshi published in 1996"


Patent
16 Aug 1996
TL;DR: In this article, the authors presented a technique, given a netlist containing a description of the terminal connections and the length and width of each device, for automatically producing a layout for each device in a circuit.
Abstract: The invention provides a technique, given a netlist containing a description of the terminal connections and the length and width of each device in a circuit, for automatically producing a layout for each device in that circuit.

92 citations


Patent
02 Feb 1996
TL;DR: In this article, a computer-implemented method for a system having a database and a plurality of application software interfaces is presented, which includes steps of reading a control type from the plurality of control types stored in the database, selecting an application software interface having a pointer based on the control type, defining an identification code for the control types, storing the pointer and the identification code and linking a first node to a second, subsequent node of control type.
Abstract: A computer-implemented method for a system having a database and a plurality of application software interfaces, the method including steps of reading a control type from a plurality of control types stored in the database, selecting an application software interface having a pointer based on the control type, defining an identification code for the control type, storing the pointer and the identification code and linking a first node to a second, subsequent node of control types and creating a linked list of the plurality of control types.

29 citations


Patent
30 Aug 1996
TL;DR: Damascene x-ray masks as mentioned in this paper consist of an oxide membrane layer having trenches formed therein defining an xray mask pattern, where the trenches are filled with collimated, sputtered tungsten sputtered in a relatively high pressure environment.
Abstract: An damascene x-ray mask comprises an oxide membrane layer having trenches formed therein defining an x-ray mask pattern. The trenches are filled with collimated, sputtered tungsten sputtered in a relatively high pressure environment. The result is a dense, low stress tungsten film completely filling the trenches. Damascene refers to the process by which the mask is formed. The mask is formed on a silicon substrate and then the substrate is etched away from the bottom side leaving substantially just the oxide layer and the collimated tungsten. The oxide layer is transparent to x-rays and the collimated tungsten layer is opaque to x-rays.

5 citations