R
Raymond Nicholas Vrtis
Researcher at Air Products & Chemicals
Publications - 125
Citations - 3280
Raymond Nicholas Vrtis is an academic researcher from Air Products & Chemicals. The author has contributed to research in topics: Dielectric & Chemical vapor deposition. The author has an hindex of 26, co-authored 125 publications receiving 3273 citations.
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Patent
Mechanical Enhancement of Dense and Porous Organosilicate Materials by UV Exposure
Aaron Scott Lukas,Mark Leonard O'neill,Jean Louise Vincent,Raymond Nicholas Vrtis,Mark Daniel Bitner,Eugene Joseph Karwacki +5 more
TL;DR: In this paper, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties compared to the as-deposited film.
Patent
Organosilicon precursors for interlayer dielectric films with low dielectric constants
Jean Louise Vincent,Mark Leonard,Howard Paul Withers,Scott Edward Beck,Raymond Nicholas Vrtis +4 more
TL;DR: In this article, a method of forming a low dielectric constant interlayer interlayer Dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a SilyL ether oligomer, or an organosailicon compound containing one or more reactive groups was proposed.
Patent
Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
Raymond Nicholas Vrtis,Mark Leonard O'neill,Jean Louise Vincent,Aaron Scott Lukas,Manchao Xiao,John Anthony Thomas Norman +5 more
TL;DR: A porous organosilica glass (OSG) as discussed by the authors is a single phase of a material represented by the formula Si v O w C x H y F z, where v+w+x+y+z=100, w is from 10 to 65 atomic %, x is from 5 to 30 atomic % and y is from 0 to 50 atomic %.
Patent
Activated chemical process for enhancing material properties of dielectric films
TL;DR: In this article, the authors proposed a method for restoring a dielectric constant of a layer of a silicon-containing material having at least one surface and at least a second surface.
Patent
Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
Raymond Nicholas Vrtis,Mark Leonard O'neill,Jean Louise Vincent,Aaron Scott Lukas,Manchao Xiao,John Anthony Thomas Norman +5 more
TL;DR: In this article, a method for providing a porous organosilica glass (OSG) film that consists of a single phase of a material represented by the formula SivOwCxHyFz, v+w+x+y+z=100, v is from 10 to 35 atomic %, w is from 20 to 65 atomic % and x is from 5 to 30 atomic %.