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Rémy Fulcrand

Researcher at University of Lyon

Publications -  31
Citations -  1526

Rémy Fulcrand is an academic researcher from University of Lyon. The author has contributed to research in topics: Nanofluidics & Inductor. The author has an hindex of 14, co-authored 27 publications receiving 1218 citations. Previous affiliations of Rémy Fulcrand include Claude Bernard University Lyon 1 & Hoffmann-La Roche.

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Giant osmotic energy conversion measured in a single transmembrane boron nitride nanotube

TL;DR: The fabrication and use of a hierarchical nanofluidic device made of a boron nitride nanotubes that pierces an ultrathin membrane and connects two fluid reservoirs is described, which allows the detailed study of fluidic transport through a single nanotube under diverse forces, including electric fields, pressure drops and chemical gradients.
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Large Apparent Electric Size of Solid-State Nanopores Due to Spatially Extended Surface Conduction

TL;DR: An unexpectedly large ionic conduction in solid-state nanopores is demonstrated, taking its origin in anomalous entrance effects, and can have a major impact on the electrical detection of translocation events through nanopores, as well as for ionic transport in biological nanopores.
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Coupling Amperometry and Total Internal Reflection Fluorescence Microscopy at ITO Surfaces for Monitoring Exocytosis of Single Vesicles

TL;DR: A device based on transparent indium tin oxide electrodes, which allows simultaneous total internal reflection fluorescence microscopy (TIRFM) and amperometric measurements, and the ability of this device in the coupled optical and electrochemical detections of exocytotic events is demonstrated using enterochromaffin BON cells.
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Sub-additive ionic transport across arrays of solid-state nanopores

TL;DR: It is reported that, in contrast to naive expectations, long-range mutual interaction across an array of nanopores leads to a non-extensive, sub-linear scaling of the global conductance on the number of pores N.
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Interplay between Raman shift and thermal expansion in graphene: temperature-dependent measurements and analysis of substrate corrections

TL;DR: In this article, dedicated Raman scattering experiments were conducted for graphene monolayers deposited on silicon nitride substrates and over a broad temperature range extending over 150--800 K. The relation between those measurements for the $G$ band and the graphene TEC, which involves correcting the measured signal from the mismatch contribution of the substrate, was analyzed based on different theoretical candidates for $\ensuremath{\alpha}(T)$.