The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

Electronics based on two-dimensional materials

The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high output power density, high operation voltage and high input impedance GaN-based RF power devices have made substantial progresses in the last decade This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, to achieve the state-of-the-art microwave and millimeter-wave performance The reliability and manufacturing challenges are also discussed

GaN-Based RF Power Devices and Amplifiers

Recent changes in how people consume multimedia services are causing an explosive increase in mobile traffic. With more and more people using wireless networks, the demand for the ultra-fast wireless communications systems is increasing. To date, this demand has been accommodated with advanced modulation schemes and signal-processing technologies at microwave frequencies. However, without increasing the carrier frequencies for more spectral resources, it may be quite difficult to keep up with the needs of users. Although there are several alternative bands, recent advances in terahertz-wave (THz-wave) technologies have attracted attention due to the huge bandwidth of THz waves and its potential for use in wireless communications. The frequency band of 275 ~ 3000 GHz , which has not been allocated for specific uses yet, is especially of interest for future wireless systems with data rates of 10 Gb/s or higher. Although THz communications is still in a very early stage of development, there have been lots of reports that show its potential. In this review, we will examine the current progress of THz-wave technologies related to communications applications and discuss some issues that need to be considered for the future of THz communications.

Present and Future of Terahertz Communications

Microwave photonics with superconducting quantum circuits

As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.

A role for graphene in silicon-based semiconductor devices

We discuss results of low noise amplifier Monolithic Millimeter-wave Integrated Circuits (MMICs), which were designed for specific frequencies in the range of 70-200 GHz. We report on room temperature and cryogenic noise performance for a variety of circuits. The designs utilize Northrop Grumman Corporation’s (NGC) 35 nm gate length InP HEMT technology. Some of the lowest reported noise figures to date have been observed with this process at cryogenic temperatures.

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Cryogenic MMIC Low Noise Amplifiers for W- Band and Beyond

In this letter, a new power amplifier topology is demonstrated which allows the use of large (120 mum/transistors) at extremely high frequency. This is accomplished by using compact matching networks consisting of coplanar waveguide transmission lines and metal-insulator-metal capacitors to match each of the three amplifier stages. The resulting amplifier achieves a peak gain of 16.5 dB at 260 GHz. Power measurements indicate that the chip achieves >5.9 mW (unsaturated) of output power and 4% power added efficiency at a frequency of 270 GHz, where the output power is limited by the available source drive power. This power level from a single transistor represents a significant improvement at this frequency band.

A New Sub-Millimeter Wave Power Amplifier Topology Using Large Transistors

The design and fabrication of a 183 GHz MMIC LNA module is presented. The module has gain >20 dB and noise figure <8.3 dB waveguide flange to waveguide flange. This demonstrates that MMIC technology has advanced to the point that they can be considered as legitimate front ends for heterodyne receivers. This paper discusses the development of the module.

A 183 GHz low noise amplifier module for the conical-scanning microwave imager sounder (CMIS) program

A W-band 3-stage monolithic low noise amplifier has been developed based on InGaAs/InAlAs/InP HEMT MMIC technology. Both wafer passivation and stabilization bakes have been introduced for the first time to the MMIC process to make it more suitable for production. A minimum noise figure of 3.3 dB and 20 dB associated gain has been achieved at 94 GHz and represents the best reported performance to date for any passivated multi-stage MMIC LNA's operating at W-band. >

A fully passivated ultra low noise W-band monolithic InGaAs/InAlAs/InP HEMT amplifier

This paper describes a manufacturable and reliable 0.1 μm AlSb/InAs MMIC technology for ultra-low power applications. AlSb/InAs HEMTs have been demonstrated with only one-tenth power dissipation of conventional InAlAs/InGaAs/InP HEMTs. The uniform DC and RF performance of AlSb/InAs HEMTs have been demonstrated on 3-inch GaAs substrates. The further demonstration of reliable AlSb/InAs HEMT technology warrants the successful insertion of AlSb/InAs HEMT MMICs for military and space applications with ultra-low power requirements.

Richard Lai

Papers

Cryogenic MMIC Low Noise Amplifiers for W- Band and Beyond

A New Sub-Millimeter Wave Power Amplifier Topology Using Large Transistors

A 183 GHz low noise amplifier module for the conical-scanning microwave imager sounder (CMIS) program

A fully passivated ultra low noise W-band monolithic InGaAs/InAlAs/InP HEMT amplifier

Manufacturable and Reliable 0.1 μm AlSb/InAs HEMT MMIC Technology for Ultra-Low Power Applications