Recent developments in chip-based nonlinear photonics offer the tantalizing prospect of realizing many applications that can use optical frequency comb devices that have form factors smaller than 1 cm3 and that require less than 1 W of power. A key feature that enables such technology is the tight confinement of light due to the high refractive index contrast between the core and the cladding. This simultaneously produces high optical nonlinearities and allows for dispersion engineering to realize and phase match parametric nonlinear processes with laser-pointer powers across large spectral bandwidths. In this Review, we summarize the developments, applications and underlying physics of optical frequency comb generation in photonic-chip waveguides via supercontinuum generation and in microresonators via Kerr-comb generation that enable comb technology from the near-ultraviolet to the mid-infrared regime. This Review discusses the developments and applications of on-chip optical frequency comb generation based on two concepts—supercontinuum generation in photonic-chip waveguides and Kerr-comb generation in microresonators.

Photonic-chip-based frequency combs

A topical review of numerical and experimental studies of supercontinuum generation in photonic crystal fiber is presented over the full range of experimentally reported parameters, from the femtosecond to the continuous-wave regime. Results from numerical simulations are used to discuss the temporal and spectral characteristics of the supercontinuum, and to interpret the physics of the underlying spectral broadening processes. Particular attention is given to the case of supercontinuum generation seeded by femtosecond pulses in the anomalous group velocity dispersion regime of photonic crystal fiber, where the processes of soliton fission, stimulated Raman scattering, and dispersive wave generation are reviewed in detail. The corresponding intensity and phase stability properties of the supercontinuum spectra generated under different conditions are also discussed.

Supercontinuum generation, photonic crystal fiber

Dual-comb spectroscopy is a powerful technique for real-time, broadband optical sampling of molecular spectra, which requires no moving components. Recent developments with microresonator-based platforms have enabled frequency combs at the chip scale. However, the need to precisely match the resonance wavelengths of distinct high quality-factor microcavities has hindered the development of on-chip dual combs. We report the simultaneous generation of two microresonator combs on the same chip from a single laser, drastically reducing experimental complexity. We demonstrate broadband optical spectra spanning 51 THz and low-noise operation of both combs by deterministically tuning into soliton mode-locked states using integrated microheaters, resulting in narrow ( 1 GHz).

/pdf/on-chip-dual-comb-source-for-spectroscopy-4x19w2lgyl.pdf

On-chip dual-comb source for spectroscopy

High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as an attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion has enabled broadband nonlinear optical frequency comb generation. Such frequency combs have been successfully applied in coherent communication and ultrashort pulse generation. However, the reliable fabrication of high confinement waveguides from stoichiometric, high stress SiN remains challenging. Here we present a novel photonic Damascene fabrication process enabling the use of substrate topography for stress control and thin film crack prevention. With close to unity sample yield we fabricate microresonators with 1.35 μm thick waveguides and optical Q-factors of 3.7×106 and demonstrate single temporal dissipative Kerr soliton based coherent optical frequency comb generation. Our newly developed process is also interesting for other material platforms, photonic integration, and mid-infrared Kerr comb generation.

Photonic Damascene process for integrated high-Q microresonator based nonlinear photonics

The silicon nitride (Si3N4) planar waveguide platform has enabled a broad class of low-loss planar-integrated devices and chip-scale solutions that benefit from transparency over a wide wavelength range (400–2350 nm) and fabrication using wafer-scale processes. As a complimentary platform to silicon-on-insulator (SOI) and III–V photonics, Si3N4 waveguide technology opens up a new generation of system-on-chip applications not achievable with the other platforms alone. The availability of low-loss waveguides (<1 dB/m) that can handle high optical power can be engineered for linear and nonlinear optical functions, and that support a variety of passive and active building blocks opens new avenues for system-on-chip implementations. As signal bandwidth and data rates continue to increase, the optical circuit functions and complexity made possible with Si3N4 has expanded the practical application of optical signal processing functions that can reduce energy consumption, size and cost over today’s digital electronic solutions. Researchers have been able to push the performance photonic-integrated components beyond other integrated platforms, including ultrahigh Q resonators, optical filters, highly coherent lasers, optical signal processing circuits, nonlinear optical devices, frequency comb generators, and biophotonic system-on-chip. This review paper covers the history of low-loss Si3N4 waveguide technology and a survey of worldwide research in a variety of device and applications as well as the status of Si3N4 foundries.

/pdf/silicon-nitride-in-silicon-photonics-56jiki213n.pdf

Silicon Nitride in Silicon Photonics

We report ultra-broadband supercontinuum generation in high-confinement Si3N4 integrated optical waveguides. The spectrum extends through the visible (from 470 nm) to the infrared spectral range (2130 nm) comprising a spectral bandwidth wider than 495 THz, which is the widest supercontinuum spectrum generated on a chip.

/pdf/on-chip-visible-to-infrared-supercontinuum-generation-with-1nwytd0b78.pdf

On-chip visible-to-infrared supercontinuum generation with more than 495 THz spectral bandwidth.

In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.

High confinement, high yield Si3N4 waveguides for nonlinear optical applications

High confinement, high yield Si3N4 waveguides for nonlinear optical application

We demonstrate 5 dB net gain in an erbium-doped tellurium-oxide-coated silicon nitride waveguide. The amplifier design leverages the high refractive index and high gain in erbium-doped tellurite glass as well as the ultra-low losses and mature, reliable, and low-cost fabrication methods of silicon nitride waveguide technology. We show that the waveguide platform demonstrates low background propagation losses of 0.25 dB/cm based on a ring resonator device with a Q factor of 1.3×106 at 1640 nm. We measure 5 dB peak net gain at 1558 nm and >3  dB of net gain across the C band in a 6.7 cm long waveguide for 35 mW of launched 1470 nm pump power. Gain per unit length of 1.7 and 1.4 dB/cm is measured in a 2.2 cm long waveguide for 970 and 1470 nm pump wavelengths, respectively. Amplifier simulations predict that >10  dB gain can be achieved across the C band simply by optimizing waveguide length and fiber-chip coupling. These results demonstrate a promising approach for the monolithic integration of compact erbium-doped waveguide amplifiers on silicon nitride chips and within silicon-based photonic integrated circuits.

Erbium-doped TeO 2 -coated Si 3 N 4 waveguide amplifiers with 5 dB net gain

Ultra-broadband radiofrequency (RF) receivers are required in higher frequency-band wireless communications, radar communications or multi-band applications in radio telescopes. Such ultra-broadband receivers are inherently difficult to establish with electronics because of limits in the bandwidth of the devices. Photonic means of RF photonic receivers/frontends can overcome the bandwidth limitation in electrical receivers. One aspect that should be considered is the precise signal processing in the optical domain. Here, a full-band (from the L-band to the W-band) all-optical RF receiver based on the Si3N4 microring filter is proposed and experimentally demonstrated. The resolution and processing range of the filter are lower than 420 MHz and larger than 112.9 GHz (FSR larger than 225.78 GHz), respectively, and the out-band suppression of this filter is greater than 40 dB. The center frequency of the filter can be altered for more than one FSR by tuning the phase-shifter on top of the ring. The performance of the full-band all-optical RF-receiver has been discussed, and the spurious free dynamic range of the receiver from the L-band to the Ka-band (limited by the bandwidth of the modulator in our experiment) has been measured to be larger than 111.6 dB·Hz2/3.

Richard Mateman

Papers

On-chip visible-to-infrared supercontinuum generation with more than 495 THz spectral bandwidth.

High confinement, high yield Si3N4 waveguides for nonlinear optical applications

High confinement, high yield Si3N4 waveguides for nonlinear optical application

Erbium-doped TeO 2 -coated Si 3 N 4 waveguide amplifiers with 5 dB net gain

All-Optical Full-Band RF Receiver Based on an Integrated Ultra-High-Q Bandpass Filter