Albert van Rees

TL;DR: An overview of the most recent developments and improvements to the low-loss TriPleX Si3N4 waveguide technology is presented in this article, which can be combined to design complex functional circuits, but more important are manufactured in a single monolithic flow to create a compact photonic integrated circuit.

TL;DR: The ultra-broadband supercontinuum generation in high-confinement Si3N4 integrated optical waveguides is reported, comprising a spectral bandwidth wider than 495 THz, which is the widestsupercontinuum spectrum generated on a chip.

TL;DR: Using this technique no stress-induced cracks in the Si(3)N(4) layer were observed resulting in a high yield of devices on the wafer, and propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.

TL;DR: A hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip is demonstrated.

TL;DR: In this article, a hybrid integrated diode laser source with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits is presented, achieving sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around a 1.55 μm wavelength, and an output power above 100 mW.