J
Jörn P. Epping
Researcher at MESA+ Institute for Nanotechnology
Publications - 58
Citations - 1049
Jörn P. Epping is an academic researcher from MESA+ Institute for Nanotechnology. The author has contributed to research in topics: Photonics & Laser. The author has an hindex of 12, co-authored 47 publications receiving 755 citations. Previous affiliations of Jörn P. Epping include University of Münster & University of Twente.
Papers
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Journal ArticleDOI
Low-Loss Si3N4 TriPleX Optical Waveguides: Technology and Applications Overview
Chris G. H. Roeloffzen,Marcel Hoekman,Edwin J. Klein,Lennart Wevers,R. B. Timens,Denys Marchenko,Dimitri Geskus,Ronald Dekker,Andrea Alippi,Robert Grootjans,Albert van Rees,Ruud M. Oldenbeuving,Jörn P. Epping,Rene Heideman,Kerstin Worhoff,Arne Leinse,Douwe Geuzebroek,Erik Schreuder,Paulus W. L. van Dijk,Ilka Visscher,Caterina Taddei,Youwen Fan,Caterina Taballione,Yang Liu,David Marpaung,Leimeng Zhuang,Meryem Benelajla,Klaus J. Boller +27 more
TL;DR: An overview of the most recent developments and improvements to the low-loss TriPleX Si3N4 waveguide technology is presented in this article, which can be combined to design complex functional circuits, but more important are manufactured in a single monolithic flow to create a compact photonic integrated circuit.
Journal ArticleDOI
On-chip visible-to-infrared supercontinuum generation with more than 495 THz spectral bandwidth.
Jörn P. Epping,Tim Hellwig,Marcel Hoekman,Richard Mateman,Arne Leinse,Rene Heideman,Albert van Rees,Peter J. M. van der Slot,Christopher James Lee,Carsten Fallnich,Klaus J. Boller +10 more
TL;DR: The ultra-broadband supercontinuum generation in high-confinement Si3N4 integrated optical waveguides is reported, comprising a spectral bandwidth wider than 495 THz, which is the widestsupercontinuum spectrum generated on a chip.
Journal ArticleDOI
Two-octave spanning supercontinuum generation in stoichiometric silicon nitride waveguides pumped at telecom wavelengths
Marco A. G. Porcel,Florian Schepers,Jörn P. Epping,Tim Hellwig,Marcel Hoekman,Rene Heideman,Peter J. M. van der Slot,Christopher James Lee,Robert Schmidt,Rudolf Bratschitsch,Carsten Fallnich,Klaus J. Boller +11 more
TL;DR: The infrared part of the supercontinuum spectra shifts progressively towards the mid-infrared, well beyond 2.6 µm, by increasing the width of the waveguides, which agrees well with theoretical modeling based on the generalized nonlinear Schrödinger equation.
Journal ArticleDOI
High confinement, high yield Si3N4 waveguides for nonlinear optical applications
Jörn P. Epping,Marcel Hoekman,Richard Mateman,Arne Leinse,Rene Heideman,Albert van Rees,Peter J. M. van der Slot,Christopher James Lee,Klaus J. Boller +8 more
TL;DR: Using this technique no stress-induced cracks in the Si(3)N(4) layer were observed resulting in a high yield of devices on the wafer, and propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.
Journal ArticleDOI
Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits
Klaus J. Boller,Albert van Rees,Youwen Fan,Jesse Mak,Rob E. M. Lammerink,Cornelis A. A. Franken,Peter J. M. van der Slot,David Marpaung,Carsten Fallnich,Jörn P. Epping,Ruud M. Oldenbeuving,Dimitri Geskus,Ronald Dekker,Ilka Visscher,Robert Grootjans,Chris G. H. Roeloffzen,Marcel Hoekman,Edwin J. Klein,Arne Leinse,Rene Heideman +19 more
TL;DR: In this article, a hybrid integrated diode laser source with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits is presented, achieving sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around a 1.55 μm wavelength, and an output power above 100 mW.