R
Riyad N. Ahmad-Bitar
Researcher at University of Jordan
Publications - 49
Citations - 953
Riyad N. Ahmad-Bitar is an academic researcher from University of Jordan. The author has contributed to research in topics: Thin film & Photoluminescence. The author has an hindex of 18, co-authored 49 publications receiving 861 citations. Previous affiliations of Riyad N. Ahmad-Bitar include Massachusetts Institute of Technology & Al-Isra University.
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A study of the optical bandgap energy and Urbach tail of spray-deposited CdS:In thin films
TL;DR: In this article, the effects of film thickness and substrate temperature on the bandgap energy and the width of the tail were investigated and a linear relation between band gap energy and width was found.
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Continuous stopping and trapping of neutral atoms
Vanderlei Salvador Bagnato,G. P. Lafyatis,A. G. Martin,E. L. Raab,Riyad N. Ahmad-Bitar,David E. Pritchard +5 more
TL;DR: In this article, neutral sodium atoms have been continuously loaded into a 0.1-K-deep superconducting magnetic trap with laser light used to slow and stop them, and the fluorescence of the trapped atoms was studied as a function of time; possible loss mechanisms from the trap are discussed.
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A comparison between different ohmic contacts for ZnO thin films
TL;DR: In this article, a comparison of metal contacts for polycrystalline ZnO thin films was made by the spray pyrolysis technique, and characterized by the I-V measurements at room temperature.
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Effect of doping and heat treatment on the photoluminescence of CdS films deposited by spray pyrolysis
TL;DR: In this article, large area thin films of n-type CdS were prepared by spray pyrolysis technique and analyzed by photoluminescence (PL) at 5 k sample temperature.
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The influence of the substrate temperature on the photovoltaic properties of spray-deposited CdS:In thin films
TL;DR: In this paper, the effect of substrate temperature on the photovoltaic properties of polycrystalline and highly transparent CdS was investigated by studying the transmittance measurements, X-ray diffraction (XRD) patterns, scanning electron microscope (SEM) observations and the I-V plots.