Showing papers by "Robert A. Reed published in 1999"
12 Jul 1999
TL;DR: In this article, the authors present heavy ion and proton single event effects (SEE) as well as radiation damage ground test results for candidate spacecraft electronics including digital, analog, and hybrid devices.
Abstract: We present heavy ion and proton single event effects (SEE) as well as radiation damage ground test results for candidate spacecraft electronics. Microelectronics tested include digital, analog, and hybrid devices.
27 citations
TL;DR: In this paper, the authors presented a quantitative risk assessment of two radiation-hardened MOSFETs (Harris FSL11A0 and FRL11a0) using an extracted expression, integral flux curves representing different conditions, and experimentally-determined signature curves taken at different ion impact angles.
Abstract: Quantitative risk assessments are presented for two radiation-hardened MOSFETs (Harris FSL11A0 and FRL11A0) using an extracted expression, integral flux curves representing different conditions, and experimentally-determined signature curves taken at different ion impact angles. The effectiveness of certain parameters including the selected orbit, spacecraft shielding thickness, drain and gate biases, device hardness, and time of exposure are discussed. Failures are studied using normalized Monte Carlo simulations validated by statistical methods. These validated Monte Carlo simulations are then used to extract and present an extracted expression. The concept of a lethal ion rate is discussed. Single event gate rupture (SEGR) failure thresholds at different ion impact angles are measured and reported on the Harris FSL11A0 and FRL11A0 (radiation-hardened vertical MOSFETs having similar layouts but with different SEGR sensitivities). Integral flux curves are presented for various orbits and conditions. Predictions of very early failures are performed using the extracted expression, the integral flux curves, and the new signature curves. Based upon these predictions, the influence of selected parameters are evaluated.
27 citations
TL;DR: In this article, an analytic study of the Figure Of Merit (FOM) concept and compares the FOM model with other empirical models is presented, and it is shown that the one parameter characterization of a device gives, in most cases, a good agreement with the rates found using the full SEU cross section plots of the devices.
Abstract: Petersen has introduced a one parameter characterization of a device by the Figure Of Merit (FOM). It was claimed that this parameter was sufficient to estimate the SEU rate in almost all orbits. The present paper presents an analytic study of the FOM concept and compares the FOM model with other empirical models. It is found that indeed the FOM parameter gives, in most cases, a good agreement with the rates found using the full SEU cross section plots of the devices. The agreement is poorer in cases where a high portion of the proton flux comes from low energy protons and for very SEU-hard devices. This is demonstrated for certain devices (FPGAs) where the FOM predicted by proton may be smaller by an order of magnitude than the FOM from heavy ions.
23 citations
13 Sep 1999
TL;DR: In this paper, the in-flight data of SEUs in the devices of panels B and C of the MPTB experiments were presented, and the ground test data for M65656 were used to calculate the SEU rates in this device using the calculated flux of ions along the orbit.
Abstract: The in-flight data of SEUs in the devices of panels B and C of the MPTB experiments are presented. Ground test data for M65656 are used to calculate the SEU rates in this device using the calculated flux of ions along the orbit. The models used are CREME96, simple expressions derived here, and the figure of merit model. A very good agreement is found between these calculations and the observed rates.
17 citations
13 Sep 1999
TL;DR: In this article, a novel approach for proton-induced single event upset characterization of the Signal Processing Technologies SPT760 is presented. But the work is limited to the case of the NASA Geoscience Laser Altimeter System.
Abstract: Some high-speed space-borne data acquisition and dissemination systems require conversion of an analog data signal into a digital signal for on-board digital processing. The NASA Geoscience Laser Altimeter System (GLAS) is one such instrument. It uses the Signal Processing Technologies SPT7760 to convert an analog signal from the laser altimeter. The analog data is converted by the SPT7760 at 1 Giga-sample per second (Gsps). These types of data handling applications can typically withstand a relatively high bit error ratio (BER). In this paper, we describe the a novel approach for proton-induced single event upset characterization of the SPT760. Data is given for operating sample rates from 125 Msps to 1 Gsps.
7 citations
13 Sep 1999
TL;DR: In this article, a radiation evaluation methodology and proton ground test results for candidate COTS PCBs and their associated electronics for low-altitude, low-inclination orbits are presented.
Abstract: We present a radiation evaluation methodology and proton ground test results for candidate COTS PCBs and their associated electronics for low-altitude, low-inclination orbits. We also discuss the implications associated with mission orbit and duration.
7 citations
TL;DR: In this paper, the effects of high energy ions, ferroelectric memory architectures, and shallow trench isolation on the hardness of programmable technologies have been investigated and a detailed single event latchup (SEL) study has been performed.
Abstract: Architecture and process, combined, significantly affect the hardness of programmable technologies. The effects of high energy ions, ferroelectric memory architectures, and shallow trench isolation are investigated. A detailed single event latchup (SEL) study has been performed.
7 citations