At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

Method of Manufacturing a Semiconductor Device

An insulative film, such as SiO 2 , Si 3 N 4 and PSG films, for example, is commonly used the passivation film or gate electrode of MISFETs. Stability of the insulative films during the production or operation of the semiconductor devices is enhanced by providing an insulative film which is formed by nitridation, for example, in an NH 3 gas, of an SiO 2 film, preferably a directly thermally oxidized film of silicon. The insulative film according to the present invention is used for a gate insulation film in MISFETs, a capacitor or passivation film for semiconductor devices, and as a mask for selectively forming circuit elements of semiconductor devices. The process for forming the insulative film may comprise successive nitridation, oxidation and nitridation steps.

Process for producing a semiconductor device having a silicon oxynitride insulative film

A film for hermetically passivating monocrystalline silicon includes sequential layers of undoped amorphous silicon, oxygen doped polycrystalline silicon, silicon rich oxynitride, and silicon nitride, and may be overlaid with an organic bulk dielectric such as polyimide The inorganic film accurately sets the monocrystalline surface Fermi potential, independent of ambient electrical, mechanical, thermal, ionic, and moisture conditions A method for depositing the amorphous silicon and the oxygen doped polycrystalline silicon layers of the film includes sequentially reacting monosilane in an inert carrier gas, such as helium or argon, and nitrous oxide The layers are blended by varying the deposition temperature, the nitrous oxide flow rate, the monosilane flow rate, the monosilane dilution, and the inert carrier gas species The layers are annealed to locally segregate the oxygen, to grow the grains to the proper size, and to set the final recombination velocity of the monocrystalline region

Multilayer semi-insulating film for hermetic wafer passivation and method for making same

A method for making wide, deep recessed oxide isolation trenches in silicon semiconductor substrates. A semi-conductor substrate is selectively etched to produce a spaced succession of narrow, shallow trenches separated by narrow silicon mesas. Silicon oxide is chemical-vapor-deposited on the horizontal and vertical surfaces of the etched structure to a thickness equalling the width of a desired silicon oxide mask. The mask is used for etching multiple deep trenches in the substrate, the trenches being separated by thin walls of silicon. The thickness of the walls is uniformly equal to and determined by the thickness of the deposited silicon oxide mask. The deposited silicon oxide is reactively ion etched away from the horizontal surfaces, leaving the oxide only on the sidewalls of the shallow trenches. The silicon is deeply etched, using the remaining oxide as a mask. Boron is ion implanted and the resulting structure is thermally oxidized sufficiently to completely oxidize the silicon under the deposited oxide mask and to oxidize the silicon surfaces at the bottoms of the trenches. The remaining trench volume is filled in with chemical-vapor-deposited silicon dioxide.

Process for making large area isolation trenches utilizing a two-step selective etching technique

A field plate structure is provided to terminate the electrode of a semiconductor device in a manner to reduce curvature of electric field within the body of the semiconductor device underlying the electrode and surrounding the electrode. A stepped electrode outer rim is provided in effect through the use of an underlying polysilicon which drapes over an underlying oxide. The main contact metal, typically aluminum, overlies the polysilicon but is upwardly displaced above the relatively thin polysilicon by a relatively thick oxide layer over the polysilicon. The composite effect of the thin polysilicon layer at one level and the heavier metallizing at a higher level but overlapping the polysilicon is that of a metal electrode deposited atop an insulation layer having two steps therein.

Composite metal and polysilicon field plate structure for high voltage semiconductor devices

A process and the resulting structure for making metal oxide silicon field effect transistors and vertical bipolar transistors on the same semiconductor chip with the devices being dielectrically isolated from each other. The process does not require an epitaxial layer. The bipolar devices have utility as cross-chip or off-chip drivers or can be utilized for analog circuitry.

Process for making field effect and bipolar transistors on the same semiconductor chip

An improved field effect transistor structure which reduces a leakage phenomenon, termed the "sidewalk" effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive silicon dioxide or silicon oxynitride, which is between the conductive oxide and the silicon nitride layer which forms a portion of the gate insulator for the field effect transistor.

Field effect transistor structure and method of making same

An improved field effect transistor structure which reduces a leakage phenomenon, termed the "sidewalk" effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive, silicon dioxide or silicon oxynitride, which is between the conductive oxide and the silicon nitride layer which forms a portion of the gate insulator for the field effect transistor.

Robert Charles Dockerty

Papers

Process for making field effect and bipolar transistors on the same semiconductor chip

Field effect transistor structure and method of making same

Field effect transistor structure and method for making same

Procede de fabrication de transistors a effet de champ et transistors en resultant