R
Robert Joynt
Researcher at University of Wisconsin-Madison
Publications - 224
Citations - 5772
Robert Joynt is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Qubit & Quantum dot. The author has an hindex of 38, co-authored 224 publications receiving 5299 citations. Previous affiliations of Robert Joynt include University of California, Santa Barbara & Chinese Academy of Sciences.
Papers
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Journal ArticleDOI
The superconducting phases of UPt 3
Robert Joynt,Louis Taillefer +1 more
TL;DR: The heavy-fermion compound with an order parameter of unconventional symmetry is the only unambiguous case of multiple superconducting phases as mentioned in this paper, however, no single theoretical scenario is completely consistent with all the data.
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Antiferromagnetic correlations in almost-localized Fermi liquids.
TL;DR: The ground state is found to have strong antiferromagnetic short-range spin-spin correlations for nearly-half-filled bands, thus extending previous work on the half-filled case and it is shown that correlations are present only at temperatures low compared to the coherence temperature.
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Practical design and simulation of silicon-based quantum-dot qubits
Mark Friesen,P. Rugheimer,Donald E. Savage,Max G. Lagally,Daniel W. van der Weide,Robert Joynt,Mark A. Eriksson +6 more
TL;DR: In this paper, a scalable design for silicon-germanium quantum-dot qubits is presented, which incorporates vertical and lateral tunneling, and simulations of a four-qubit array suggest that the design will enable single electron occupation of each dot of a many-dot array.
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Controllable valley splitting in silicon quantum devices
Srijit Goswami,K. A. Slinker,Mark Friesen,L. M. McGuire,J. L. Truitt,Charles Tahan,Levente Klein,J. O. Chu,Patricia M. Mooney,D.W. van der Weide,Robert Joynt,Susan Coppersmith,Mark A. Eriksson +12 more
TL;DR: In this paper, it was shown that the small valley splittings observed in previous experiments on Si-SiGe heterostructures result from atomic steps at the quantum-well interface.
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Tunable Spin Loading and T 1 of a Silicon Spin Qubit Measured by Single-Shot Readout
C. B. Simmons,Jonathan Prance,B. J. Van Bael,Teck Seng Koh,Zhan Shi,Donald E. Savage,Max G. Lagally,Robert Joynt,Mark Friesen,Susan Coppersmith,Mark A. Eriksson +10 more
TL;DR: Using a theory that includes excited states of the dot and energy-dependent tunneling, it is found that a global fit to the loading rate and spin-up fraction is in good agreement with the data.