R
Roland Madar
Researcher at Centre national de la recherche scientifique
Publications - 194
Citations - 2227
Roland Madar is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Thin film & Chemical vapor deposition. The author has an hindex of 23, co-authored 194 publications receiving 2136 citations.
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Materials science: Silicon carbide in contention
TL;DR: The problem of producing large, pure wafers of the carbide could be solved, and silicon carbide, the most desirable material for high-power electronic devices, could be produced.
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Electrical and optical properties of silicide single crystals and thin films
Filippo Nava,King-Ning Tu,Olivier Thomas,Jean-Pierre Senateur,Roland Madar,A. Borghesi,Giorgio Guizzetti,U. Gottlieb,O. Laborde,Olmes Bisi +9 more
TL;DR: In this paper, the effect of impurities and defects on the transport properties of transition-metal disilicides is evaluated by examining the electrical transport of polycrystalline thin-film silicides.
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Structure antiferroma gnetique de Fe1. 125Te accompagnee d'une deformation monoclinique
TL;DR: The antiferromagnetic structure of the tetragonal phase Fe 1.125 Te has been determined in this paper, showing that below the magnetic-order temperature x-ray and neutron diffraction show a monoclinic deformation.
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Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals
TL;DR: In this article, the potentialities of different macroscopic models, thermodynamics, heat, and mass transfers on the simulation of the growth of SiC crystals with a special emphasis on their coupling mechanism were examined.
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Nickel film on (001) SiC: Thermally induced reactions
TL;DR: In this article, the reactions induced in a vacuum furnace (5×10−7 Torr) between an electron-beam-evaporated Ni film a few hundred nm thick and a (001)-oriented (i.e. Si-face-oriented) single crystalline 3C-SiC substrate are investigated by 3.2 MeV 4He2+ backscattering spectrometry, X-ray diffraction, secondary ion mass spectrometer, and scanning electron microscopy.