R
Ronald D. Kelley
Researcher at Hewlett-Packard
Publications - 4
Citations - 1424
Ronald D. Kelley is an academic researcher from Hewlett-Packard. The author has contributed to research in topics: Memristor & Diffusion (business). The author has an hindex of 4, co-authored 4 publications receiving 1345 citations.
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Journal ArticleDOI
High switching endurance in TaOx memristive devices
Jianhua Yang,M.-X. Zhang,John Paul Strachan,Feng Miao,Matthew D. Pickett,Ronald D. Kelley,Gilberto Medeiros-Ribeiro,R. Stanley Williams +7 more
TL;DR: In this paper, the authors demonstrate over 1×1010 open-loop switching cycles from a simple memristive device stack of Pt/TaOx/Ta, and compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-state thermodynamic and kinetic factors that influence endurance in metal-oxide memristors.
Journal ArticleDOI
Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.
Feng Miao,John Paul Strachan,Jianhua Yang,M.-X. Zhang,Ilan Goldfarb,Antonio C. Torrezan,Peter Eschbach,Ronald D. Kelley,Gilberto Medeiros-Ribeiro,R. Stanley Williams +9 more
TL;DR: Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism in a resistive random access memory device.
Journal Article
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
Feng Miao,John Paul Strachan,Jianhua Yang,Wei Yi,Ilan Goldfarb,M.-X. Zhang,Antonio C. Torrezan,Peter Eschbach,Ronald D. Kelley,Gilberto Medeiros-Ribeiro,R. Stanley Williams +10 more
TL;DR: In this article, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed and structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.
Journal ArticleDOI
Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching
Jianhua Yang,John Paul Strachan,Qiangfei Xia,Douglas A. A. Ohlberg,Philip J. Kuekes,Ronald D. Kelley,William F. Stickle,Duncan Stewart,Gilberto Medeiros-Ribeiro,R. Stanley Williams +9 more
TL;DR: Electrical resistance switching in conductor/insulator/conductor structures has regained signifi cant attention in the last decade motivated by the search for alternatives to conventional semiconductor electronics.