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Ronald P. Chiarello

Researcher at Argonne National Laboratory

Publications -  14
Citations -  507

Ronald P. Chiarello is an academic researcher from Argonne National Laboratory. The author has contributed to research in topics: Thin film & Calcite. The author has an hindex of 9, co-authored 14 publications receiving 485 citations. Previous affiliations of Ronald P. Chiarello include Northwestern University.

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Lead adsorption at the calcite-water interface: Synchrotron X-ray standing wave and X-ray reflectivity studies

TL;DR: In this paper, the synchrotron X-ray standing wave (XSW) measurements were combined with X-Ray reflectivity measurements to determine the precise 3D location of submonolayer Pb ions adsorbed at the calcite (104) surface from dilute aqueous solutions.
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Finite-size effect on the first-order metal-insulator transition in VO2 films grown by metal-organic chemical-vapor deposition.

TL;DR: It was found that the transition temperature, width of the transition, and the estimated electronic gap are dependent on the structural correlation length normal to the growth plane, and these dependences are discussed in terms of finite-size and substrate effects on the first-order phase transition.
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Otavite-calcite solid-solution formation at the calcite-water interface studied in situ by synchrotron X-ray scattering

TL;DR: In this article, X-ray scattering measurements were performed in situ during the formation of thin overgrowths of otavite-calcite solid-solutions at the (10 1 4) cleavage surface of single-crystal calcite.
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In-situ synchrotron X-ray reflectivity measurements at the calcite-water interface

TL;DR: In this article, in-situ synchrotron X-ray reflectivity (SXR) measurements of the calcite-water interface were made and the results indicated that the pristine calcite surface in contact with pure N 2 has an interfacial width (statistical roughness) of 2.60 ± 0.15 A.
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Structural properties of epitaxial TiO2 films grown on sapphire (11$\overline 1$0) by MOCVD

TL;DR: In this article, a low-pressure metal-organic chemical vapor deposition system at temperatures ranging from 400 to 800 degrees C was employed to characterize the structural properties of Titanium dioxide thin films.