R
Ryoji Yoshikawa
Researcher at Toshiba
Publications - 32
Citations - 156
Ryoji Yoshikawa is an academic researcher from Toshiba. The author has contributed to research in topics: Mask inspection & Lithography. The author has an hindex of 8, co-authored 32 publications receiving 152 citations.
Papers
More filters
Proceedings ArticleDOI
Advanced electron-beam writing system EX-11 for next-generation mask fabrication
Toru Tojo,Ryoji Yoshikawa,Yoji Ogawa,Shuichi Tamamushi,Yoshiaki Hattori,Souji Koikari,Hideo Kusakabe,Takayuki Abe,Munehiro Ogasawara,Kiminobu Akeno,Hirohito Anze,Kiyoshi Hattori,Ryoichi Hirano,Shusuke Yoshitake,Tomohiro Iijima,Kenji Ohtoshi,Kazuto Matsuki,Naoharu Shimomura,Noboru Yamada,Hitoshi Higurashi,Noriaki Nakayamada,Yuuji Fukudome,Shigehiro Hara,Eiji Murakami,Takashi Kamikubo,Yasuo Suzuki,Susumu Oogi,Mitsuko Shimizu,Shinsuke Nishimura,Hideyuki Tsurumaki,Satoshi Yasuda,Kenji Ooki,Kiyomi Koyama,Susumu Watanabe,Mitsuhiro Yano,Hiroaki Suzuki,Hiroshi Hoshino,Masaki Toriumi,Osamu Watanabe,Kazuo Tsuji,Mitsunobu Katayama,Seiichi Tsuchiya,Kimio Suzuki,Shiro Kurasawa,Kazuyuki Okuzono,Hirokazu Yamada,Koji Handa,Yoshio Suzuki,Tetsu Akiyama,Yoshiaki Tada,Akira Noma,Tadahiro Takigawa +51 more
TL;DR: Toshiba and Toshiba Machine have developed an advanced electron beam writing system EX-11 for next-generation mask fabrication as mentioned in this paper, which is a 50 kV variable-shaped beam lithography system for manufacturing 4x masks for 0.15 - 0.18 micrometer technology generation.
Journal ArticleDOI
Metrology and inspection required for next generation lithography
Masafumi Asano,Ryoji Yoshikawa,Takashi Hirano,Hideaki Abe,Kazuto Matsuki,Hirotaka Tsuda,Motofumi Komori,Tomoko Ojima,Hiroki Yonemitsu,Akiko Kawamoto +9 more
TL;DR: The metrology and inspection required for the development of nanoimprint lithography (NIL) and directed self-assembly (DSA), which are recognized as candidates for next generation lithography, are summarized.
Proceedings ArticleDOI
DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm
Masato Naka,Akihiko Ando,Keiko Morishita,Ryoji Yoshikawa,Takashi Kamo,Takashi Hirano,Masamitsu Itoh +6 more
TL;DR: In this paper, the capability of SIRIUS for the extreme ultraviolet mask of hp 1X nm lines and spaces pattern has been studied by evaluating the signal to noise ratio of inspection images and capture rates with 5 runs to the target defects which cause over 10% printed wafer critical dimension errors calculated by simulation.
Patent
Pattern forming method and mask pattern data
TL;DR: In this article, a self-assembly pattern was proposed for a neutralization film with a plurality of parallel line sections, and the widths of line sections of both ends of the plurality of lines sections of the neutralization films were about two times the width of each first polymer portion or each second polymer portion.
Patent
Reference data generating method, pattern defect checking apparatus, pattern defect checking method, reference data generating program, and semiconductor device manufacturing method
TL;DR: In this paper, a method for generating reference data is proposed, in which two-value or multi-value gradated data of pixels is obtained in units of pixels from a design data of a pattern to be formed on an object, a processed data is obtained by carrying out calculations to the gradated values, and a reference data for use in a comparison with a sensed data obtained by image-picking up a pattern formed on the object is obtained based on the processed data.