Toru Tojo

TL;DR: In this article, a computer detects presence of a plurality of repeated pattern areas from layout information contained in the designed pattern data, reads the arrangement, the number, the dimension and the repeated pitch of the repeated pattern area, and automatically fetches an inspection area of the die-to-die comparison method.

TL;DR: In this article, a fixed table (41) is attached to a Z table (39) in the specimen chamber and the fixed table is provided with downwardly protruding spring contact pins (61) which are connected to lead wires (55) led outside of the chamber and arranged in a predetermined positional relation.

TL;DR: In this paper, a method of inspecting a sample on which a pattern relating to fabrication of a semiconductor device is formed is presented, where a light radiation unit, an acquiring unit, storage unit, a template, a calculation unit, correction unit, defect detection unit, and an output unit are provided.

TL;DR: In this article, a sample transfer container is transferred into the preparatory chamber, and the inside of the chamber is evacuated to a vacuum atmosphere, and then the sample is then extracted from the container in the vacuum atmosphere and transferred into a treating chamber.

Abstract: A high-accuracy proximity effect correction method for high-precision masks has been developed to satisfy current and future requirements. In this paper, we explain the primary features of this method and the theories on which it is based. The developed formula for obtaining the optimum correction dose is expressed in the form of either iterations or an infinite series of functions. The advantage of this formula is that it quickly converges to the sought value, bringing about high-accuracy proximity effect correction with a high calculation speed. A coarse graining method (covering pattern density and representative figure methods) for reducing calculation time is explained. This method has been adopted for an EX-11 series and has been used for mask writing from the 180 nm design rule onward.