An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

An projection exposure apparatus and method for illuminating a transfer pattern and forming an image upon a mask for exposure from the illumination light and transfer exposing the image of the pattern of the mask under the illumination light Switching is performed between a normal illumination condition and a modified illumination condition based upon the numerical aperture of the illumination light; wherein the normal illumination condition occurs when the light quantity distribution at the illumination pupil plane is in a first region, including the optical-axis; and the modified illumination condition occurs when the light quantity distribution at the illumination pupil plane is in a second region, not including the optical-axis and wherein the pupil plane is an optical Fourier conversion surface of a pattern surface of the mask in an illumination system

Exposure apparatus and method

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

A projection exposure apparatus for projecting a pattern formed on a first object such as a reticle upon a second object such as a semiconductor wafer by use of a projection lens system, is disclosed In the apparatus, a light of a predetermined wavelength is used for the pattern projection, and a light having a different wavelength is used to align the first and second objects by way of the projection lens system A dichroic mirror film is disposed inclinedly between the first object and the projection lens system so as to reflect one of the light of the predetermined wavelength and the light of the different wavelength, and also to transmit the other By this dichroic mirror film, the light used for the alignment and reflected back from the second object is extracted out of a light path between the first and second objects After correcting effects of chromatic aberrations of the projection lens system with respect to the different wavelength, the light for the alignment is passed through the first object By this, accurate alignment using the light of a wavelength different from that to be used for the pattern projection, is made practically attainable Also, use of lights of different wavelengths, other than the wavelength to be used for the pattern projection, is made practically attainable Thus, accurate and stable alignment is attainable regardless of the configuration of the mark provided on the second object

Projection exposure apparatus

A wafer processing apparatus, comprising a wafer processing station for processing a wafer, a key input portion for inputting wafer processing instructions into the wafer processing station, and wherein at least one of a portion for accommodating a wafer carrier for carrying the wafer, a mechanism for taking the wafer out of the wafer carrier and putting it back into the wafer carrier, wafer alignment station for aligning the wafer and a wafer observing station for allowing an operator to observe the wafer, is disposed at a front side of the apparatus to which the operator faces when actuating the key input portion.

Wafer handling apparatus and method

An apparatus for continuously processing articles includes a pre-heating chamber for confining a vacuum therein provided with four openings by which an entrance chamber, two depositing chamber and an exit chamber communicate therewith individually. Each of the openings is provided with a gate valve mounted therein for covering the openings, and particularly the entrance and exit chambers serving to maintain the vacuum in the pre-heating chamber at a predetermined level while feeding unprocessed articles to and removing the processed articles from the pre-heating chamber in such a manner that the vacuum is not affected by the ambient atmosphere. The pre-heating chamber comprises a cylindrical housing in which a water-wheel-like conveyor having means for receiving and holding vacuum deposition jigs carrying articles such as optical elements is intermittently rotated to advance the vacuum deposition jigs through the pre-heating chamber. This feature of the invention facilitates reduction in the heating time per jig. In addition, the automatic inversion of the jig in half revolution of the conveyor serves to facilitate successive applications of a thin film coating on the opposite surfaces of the articles without breaking the vacuum in the processing chambers while insuring that each of the articles is treated identically to produce uniform properties of the thin film coating.

Vapor deposition apparatus

An alignment apparatus for mask and wafer each having alignment marks provided in a narrow strip like area between circuit patterns is disclosed, which mask and wafer are used in manufacturing semiconductor circuit elements. In the apparatus, the mask and wafer are scanned to obtain scan signals by means of which the amount of relative deviation between the alignment marks on mask and wafer is detected. By means of the detected signal, an alignment is effected between the mask and wafer in the apparatus. For this type of alignment apparatus, there is a problem that since the alignment marks are provided in the narrow strip like area, no coincidence between the scanning position and the strip area is attainable with pre-alignment accuracy. Improvement in the alignment apparatus according to the invention lies in that a reading of alignment marks is initiated after the coincidence is photoelectrically detected.

Alignment apparatus for mask and wafer used in manufacturing semiconductor circuit elements

This invention relates to a photo-electrical detecting apparatus for forming a dark-field image of an object on a one-dimensional image sensor and reading said image photo-electrically. The apparatus includes a telecentric objective lens, and a light source image is formed on the clear aperture plane of said lens, said image being in focus in a direction on said plane and out of focus in a perpendicular direction. A line- or band-shaped area of the object is illuminated by the light from said light source image. Thus a dark-field image of the object is formed on said one-dimensional image sensor by providing, on a plane equivalent to said aperture plane, a filter which intercepts the normal reflected light from said object and transmits the scattered light therefrom.

Photo-electrical detecting apparatus

An improved photoelectric detecting apparatus is disclosed in which a subject surface containing a pattern which diffracts light in a predetermined direction is scanned with spotlight and the diffracted light coming from the pattern is detected by means of photoelectric element so as to read out information of the pattern. The apparatus comprises a first photoelectric element for detecting the light diffracted in the predetermined direction, a second photoelectric element adapted for detecting light diffracted in directions other than the predetermined direction and an operational circuit for operating the signal derived from the first photoelectric element and that derived from the second one. Thus, when there is any diffractive matter such as flaw, dust and the like on the subject surface, diffracted light from the diffractive matter is detected by both the first and second photoelectric elements whereas diffracted light from the pattern is detected only by the first photoelectric element. By operating the outputs of the two photoelectric elements only the necessary information of the pattern can be read out.

Ryozo Hiraga

Papers

Wafer handling apparatus and method

Vapor deposition apparatus

Alignment apparatus for mask and wafer used in manufacturing semiconductor circuit elements

Photo-electrical detecting apparatus

Photoelectric detecting apparatus