S
S. Aktas
Researcher at Trakya University
Publications - 31
Citations - 493
S. Aktas is an academic researcher from Trakya University. The author has contributed to research in topics: Binding energy & Quantum well. The author has an hindex of 10, co-authored 31 publications receiving 388 citations.
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The multilayered spherical quantum dot under a magnetic field
TL;DR: The binding energy of an impurity located at the center of multilayered spherical quantum dot (MSQD) is reported as a function of the dot and barrier thickness for different alloy compositions under the influence of a magnetic field as discussed by the authors.
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The binding energy of hydrogenic impurity in multilayered spherical quantum dot
TL;DR: In this paper, the ground state binding energy of a hydrogenic impurity located at the center of a quantum dot has been studied with a variational approach, and it has been found that a variation in the binding energy has depended on the geometry of the dot.
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Electric field effect on the binding energy of a hydrogenic impurity in coaxial GaAs/Al xGa1 − x As quantum well-wires
S. Aktas,S.E. Okan,H. Akbas +2 more
TL;DR: In this article, the ground state binding energy of a hydrogenic impurity in a coaxial cylindirical quantum well wire system subjected to an external electric field applied perpendicular to the symmetry axis of the wire system was studied within a variational scheme.
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Electric and magnetic field effects on the binding energy of a hydrogenic donor impurity in a coaxial quantum well wire
TL;DR: In this article, the effect of both an electric and magnetic field on the hydrogenic binding energy of a shallow donor impurity in a coaxial GaAs-(Ga, Al)As quantum well wire (QWW) has been investigated as a function of the impurity position and barrier thicknesses for different values of the applied magnetic and electric field strengths.
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Geometric effects on energy states of a hydrogenic impurity in multilayered spherical quantum dot
TL;DR: In this paper, the energy states of a hydrogenic impurity, located at the center of a multilayered spherical quantum dot, are calculated as functions of the barrier thickness and the inner dot thickness by using a fourth-order Runge-Kutta method.