S
S. Ha
Researcher at Carnegie Mellon University
Publications - 9
Citations - 501
S. Ha is an academic researcher from Carnegie Mellon University. The author has contributed to research in topics: Dislocation & Crystallographic defect. The author has an hindex of 8, co-authored 9 publications receiving 461 citations.
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Dislocation conversion in 4H silicon carbide epitaxy
TL;DR: In this article, the propagation of basal plane dislocations from off-axis 4H silicon carbide substrates into the homo-epitaxial layers has been investigated using chemical etching, optical microscopy, and transmission electron microscopy (TEM).
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Integrated process modeling and experimental validation of silicon carbide sublimation growth
TL;DR: In this article, a model that integrates heat and mass transfer, growth kinetics, anisotropic thermal stresses is developed to predict the global temperature distribution, growth rate and dislocation distribution.
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Dislocation nucleation in 4H silicon carbide epitaxy
TL;DR: The dislocation nucleation during 4H silicon carbide homoepitaxy has been investigated using chemical etching, optical microscopy, atomic force microscopy and transmission electron microscopy as mentioned in this paper.
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Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method
TL;DR: In this paper, it was shown that the dislocation arrays constitute low angle tilt boundaries, i.e., [0 0 0 1] is the common axis lying in the boundary.
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Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals
TL;DR: In this article, an etch pit array was observed on the silicon face of KOH-etched off-cut wafers and the arrays were aligned parallel to each other and perpendicular to the offcut direction.