Journal ArticleDOI
Integrated process modeling and experimental validation of silicon carbide sublimation growth
TLDR
In this article, a model that integrates heat and mass transfer, growth kinetics, anisotropic thermal stresses is developed to predict the global temperature distribution, growth rate and dislocation distribution.About:
This article is published in Journal of Crystal Growth.The article was published on 2003-05-01. It has received 51 citations till now. The article focuses on the topics: Critical resolved shear stress & Dislocation.read more
Citations
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Journal ArticleDOI
Mass transfer in AlN crystal growth at high temperatures
Vladimir Noveski,Vladimir Noveski,Raoul Schlesser,Subhash Mahajan,Stephen P. Beaudoin,Zlatko Sitar +5 more
TL;DR: In this paper, a one-dimensional mass transfer model based on equilibrium sublimation and gas phase diffusion was developed for high-temperature sub-limation growth of AlN in an RF heated reactor and validated with growth results.
Journal ArticleDOI
Effects of induction heating on temperature distribution and growth rate in large-size SiC growth system
Qi-Sheng Chen,Pingqi Gao,W.R. Hu +2 more
TL;DR: In this article, the effects of induction heating on the temperature distribution and growth rate of large-size silicon carbide (SiC) growth system were investigated and it was found that the maximum temperature and growth temperature in the growth system increase with the frequency while keeping the same current in the induction coil.
Journal ArticleDOI
Continuous Feed Physical Vapor Transport Toward High Purity and Long Boule Growth of SiC
Didier Chaussende,Francis Baillet,Ludovic Charpentier,Etienne Pernot,Michel Pons,Roland Madar +5 more
TL;DR: In this article, a new reactor concept for the growth of silicon carbide bulk crystals and/or thick epitaxial layers is presented, which combines both high-temperature chemical vapor deposition (HTCVD) for continuous feeding of the polycrystalline source and physical vapor transport (PVT) for singlecrystal growth.
Journal ArticleDOI
Thermal system design and dislocation reduction for growth of wide band gap crystals: : application to SiC growth
TL;DR: In this paper, the shape of the as-grown SiC crystals were predicted and the thermo-elastic stress fields in the crystals were calculated to describe the dislocation density distributions.
References
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Book
Theory of elasticity
TL;DR: The theory of the slipline field is used in this article to solve the problem of stable and non-stressed problems in plane strains in a plane-strain scenario.
Book
Radiative heat transfer
TL;DR: In this article, the Monte Carlo method for thermal radiation was used to estimate the radiative properties of one-dimensional Gray Media, and the method of Spherical Harmonics (PN-Approximation) was used for the same purpose.
Book
Theory of thermal stresses
TL;DR: Theory of thermal stresses, Theory of Thermal Stresses, this paper, Theory of thermal stress, and thermal stresses theory, thermal stresses and thermal stress theory in literature, 2015.